MBR12045CT

$48.80

Description：DIODE MOD SCHOTT 45V 120A 2TOWER
Series：-

SKU:14c2ce8ca090 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR12045CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12045CT

Description：DIODE MOD SCHOTT 45V 120A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：45 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 60 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR12045CT

MBR12045CT

Diode Arrays Overview

The MBR12045CT is a silicon power Schottky diode module from the GeneSiC Semiconductor MBR120 series. It features a Twin Tower package configuration with an average forward current rating of 120 A per package and a repetitive peak reverse voltage of 45 V. The device exhibits a maximum forward voltage of 0.7 V at Tj = 100 °C and supports a peak forward surge current of 800 A. Operating temperatures range from -55 °C to +150 °C, with a junction-to-case thermal resistance of 0.80 °C/W per leg.

Diode Arrays Feature Summary

High surge capability for handling transient current loads
Electrically isolated base plate design within the Twin Tower package
Not sensitive to electrostatic discharge events

Diode Arrays Applications

Low voltage high frequency inverters
Free-wheeling rectification circuits
Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal orientation and lead configuration details. Ensure that the procurement specifications align with the required voltage and current ratings for the intended application environment. Cross-reference the manufacturer datasheet for accurate thermal management requirements and mounting instructions before finalizing orders.

Diode Arrays Selection Notes

Select this component based on its 45 V blocking voltage and 120 A continuous current capacity. Consider the 0.80 °C/W thermal resistance when designing heat dissipation systems. Evaluate the Twin Tower package dimensions for mechanical fit within the target assembly. Confirm compatibility with operating temperature ranges extending up to 150 °C for robust performance in demanding environments.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 45 V to 100 V, all sharing similar current capabilities and package styles. The MBR12045CT specifically addresses applications requiring moderate voltage blocking with high current throughput in a compact form factor.