Diode Arrays MBR200200CT product image

MBR200200CT

$63.89
  • Description:DIODE MOD SCHOT 200V 100A 2TOWER
  • Series:-

SKU:d69a5ce46833 Category: Brand:

  
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MBR200200CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 100A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR200200CT

  • Description:DIODE MOD SCHOT 200V 100A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):100A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR200200CT

MBR200200CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR200200CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 200 A per package. It utilizes a Twin Tower package configuration with screw mounting capabilities. The device features a maximum junction-to-case thermal resistance of 0.45 °C/W per leg and supports a maximum operating temperature range from -55 °C to +150 °C. Peak forward surge current capability reaches 1500 A under specified half-sine pulse conditions.

Diode Arrays Feature Summary

  • High surge current capability designed for demanding transient loads
  • Electrically isolated base plate providing safety isolation
  • Not sensitive to electrostatic discharge events

Diode Arrays Applications

  • Industrial motor drive systems
  • DC-DC converter circuits
  • Uninterruptible power supply (UPS) units

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variations such as 'R' indicate reversed lead configurations that affect physical installation. Confirm the exact voltage rating corresponds to the required circuit protection level. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation within the stated temperature limits.

Diode Arrays Selection Notes

Select this component when high current handling and low forward voltage drop are critical for system efficiency. The Twin Tower package facilitates effective heat dissipation in compact industrial enclosures. Evaluate the 200 A continuous current rating against peak load requirements to ensure adequate margin. Consider the 200 V blocking voltage for compatibility with standard DC bus architectures.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series encompasses variants ranging from 150 V to 200 V reverse voltage ratings. All models share identical mechanical dimensions and terminal configurations, differing primarily in their voltage blocking specifications while maintaining consistent current and thermal performance characteristics.

Diode Arrays Replacement Considerations

Cross-reference pinout orientation carefully if substituting with 'R' suffix variants due to reversed leads. Verify that alternative modules match the 0.45 °C/W thermal resistance requirement for equivalent cooling performance.

MBR200200CTMBR200200CT
$63.89
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