MBR200200CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR200200CTR is a silicon power Schottky diode in a Twin Tower package. It offers a repetitive peak reverse voltage (VRRM) of 200 V and an average forward current (IF(AV)) of 200 A per package. The device features a maximum forward voltage of 0.92 V at Tj = 100 °C and IFM = 100 A. Thermal resistance from junction to case is 0.45 °C/W per leg. Operating and storage temperatures range from -55 °C to 150 °C. Peak forward surge current is 1500 A for 8.3 ms half-sine pulses.

Diode Arrays Feature Summary

• High surge capability design
• Twin Tower package configuration
• Not ESD sensitive

Diode Arrays Applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm terminal configuration, as 'R' devices have leads reversed. Ensure the component matches the required voltage and current ratings for your circuit design. Cross-reference the datasheet revision date and manufacturer specifications to guarantee authenticity and performance compliance before procurement.

Diode Arrays Selection Notes

Select this component for high-current applications requiring robust surge handling. The low thermal resistance supports efficient heat dissipation in dense layouts. Verify that the 200 V reverse voltage rating exceeds the circuit's peak inverse voltage. Consider the Twin Tower package dimensions for mechanical fit and thermal management requirements in the final assembly.

Diode Arrays Part Context

This part belongs to the MBR200150CT through MBR200200CTR series of silicon power Schottky diodes. The series covers voltage ratings from 150 V to 200 V while maintaining a consistent 200 A average forward current rating. All variants share the same Twin Tower package and thermal characteristics, differing primarily in their blocking voltage capabilities.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include MBR200150CT and MBR200200CT. Note that parts with the 'R' suffix have reversed leads compared to standard versions. Ensure any replacement matches the 200 V VRRM and 200 A IF(AV) ratings exactly to maintain circuit integrity.

Diode Arrays FAQ

What is the difference between MBR200200CT and MBR200200CTR?

The 'R' suffix indicates that the device has reversed leads compared to the standard CT version. The electrical characteristics and package dimensions remain identical.

Is the MBR200200CTR sensitive to electrostatic discharge?

No, the datasheet explicitly states that the device is not ESD sensitive.

What is the maximum operating temperature?

The maximum junction temperature (Tj) is 150 °C, which also serves as the upper limit for the storage temperature range.