Diode Arrays MBR20020CT product image

MBR20020CT

$63.89
  • Description:DIODE MOD SCHOTT 20V 200A 2TOWER
  • Series:-

SKU:af03513e323c Category: Brand:

  
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MBR20020CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 20V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR20020CT

  • Description:DIODE MOD SCHOTT 20V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):20 V
  • Current - Average Rectified (Io) (per Diode):200A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 100 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR20020CT

MBR20020CT

Diode Arrays Overview

The MBR20020CT is a silicon power Schottky diode module from the GeneSiC Semiconductor MBR200 series. It features a Twin Tower package with screw mount installation. The device supports a repetitive peak reverse voltage of 20 V and an average forward current of 200 A per package. Key electrical parameters include a maximum forward voltage of 0.70 V per leg, a junction-to-case thermal resistance of 0.45 °C/W per leg, and a peak forward surge current capability of 1500 A per leg. The operating temperature range spans from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge current capability for robust performance under transient conditions
  • Twin Tower package design facilitating efficient thermal management
  • Non-ESD sensitive construction for simplified handling

Diode Arrays Applications

  • High-frequency switching power supplies
  • DC-DC converters
  • Free-wheeling rectification circuits
  • Reverse battery protection systems

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through the manufacturer's latest product data sheet or environmental declaration before procurement. Ensure that the selected variant matches the required voltage and current ratings for the intended application circuit.

Diode Arrays Selection Notes

Select this component based on its 20 V reverse voltage rating and 200 A average forward current capacity. Evaluate the 0.45 °C/W thermal resistance to ensure adequate heatsinking for the target operating environment. Consider the Twin Tower package dimensions for mechanical integration and verify the 1500 A surge current rating against potential inrush requirements.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with reverse voltages ranging from 20 V to 40 V. These modules are designed for high-efficiency power conversion applications requiring low forward voltage drop and high reliability in demanding thermal environments.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include MBR20030CT, MBR20035CT, and MBR20040CT. Verify that the alternative part number meets the specific voltage and current requirements of the original design.

MBR20020CTMBR20020CT
$63.89
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