Diode Arrays MBR2550CTHE3/45 product image

MBR2550CTHE3/45

  • Description:DIODE ARR SCHOTTKY 50V TO-220AB
  • Series:-

SKU:6743f3f831ef Category: Brand:

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MBR2550CTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTTKY 50V TO-220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2550CTHE3/45

  • Description:DIODE ARR SCHOTTKY 50V TO-220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):12.5A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR2550CTHE3/45

MBR2550CTHE3/45

Diode Arrays Overview

The MBR2550CTHE3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a maximum repetitive peak reverse voltage of 50 V and a total maximum average forward rectified current of 25 A, with 12.5 A per diode. The device has a peak forward surge current rating of 150 A and operates within a junction temperature range of -65 °C to +150 °C. Electrical characteristics include a maximum instantaneous forward voltage of 0.75 V at 15 A and 0.82 V at 30 A (TC = 25 °C), and a maximum reverse current of 0.2 mA at 25 °C. It utilizes a TO-220AB package.

Diode Arrays Feature Summary

  • Guardring structure provides overvoltage protection
  • Low forward voltage drop for high efficiency
  • High forward surge capability
  • Suitable for high frequency operation

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Free wheeling diodes
  • DC-to-DC converters
  • Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific suffix HE3 indicates high reliability grade qualification against JESD 201 class 2 whisker test standards. Confirm the /45 suffix corresponds to the tube delivery mode and base quantity of 50 units. Ensure the component meets RoHS 2002/95/EC directives and WEEE 2002/96/EC compliance requirements before procurement.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for low voltage applications. The TO-220AB package supports mounting torques up to 10 in-lbs. Verify thermal resistance requirements, as the junction-to-case thermal resistance is 1.5 °C/W per diode. Ensure the operating environment stays within the specified storage and junction temperature limits.

Diode Arrays Part Context

This part belongs to the MBR(F,B)2535CT through MBR(F,B)2560CT series from Vishay General Semiconductor. The series covers reverse voltages ranging from 35 V to 60 V while maintaining a consistent 25 A total average forward current rating across all variants in the lineup.

Diode Arrays Replacement Considerations

MBR2550CT-E3/45

Diode Arrays FAQ

What does the HE3 suffix indicate for this component?

The HE3 suffix denotes the high reliability grade, which is qualified under AEC-Q101 standards and meets the JESD 201 class 2 whisker test.

What is the isolation voltage specification?

Isolation voltage specifications are provided only for the ITO-220AB package variant, rated at 1500 VAC for 1 minute from terminal to heatsink.

How is the forward voltage drop defined?

The maximum instantaneous forward voltage is 0.75 V at 15 A and 0.82 V at 30 A, measured at a case temperature of 25 °C.

MBR2550CTHE3/45MBR2550CTHE3/45

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