Diode Arrays MBR2X080A080 product image

MBR2X080A080

$34.47
  • Description:DIODE MOD SCHOTT 80V 80A SOT-227
  • Series:-

SKU:4f6fb5eaba45 Category: Brand:

  
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MBR2X080A080 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 80A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X080A080

  • Description:DIODE MOD SCHOTT 80V 80A SOT-227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):80A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 80 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 80 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X080A080

MBR2X080A080

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X080A080 is a silicon Schottky rectifier module housed in an electrically isolated SOT-227 package. It provides a maximum repetitive peak reverse voltage of 80 V and supports an average forward current of 160 A per package at a case temperature of 110 °C. The device features a peak forward surge current capability of 900 A per leg and operates within a junction temperature range of -40 to 150 °C. Electrical characteristics include a maximum instantaneous reverse current of 30 mA at rated DC blocking voltage and a typical forward voltage drop of 0.73 V at 80 A and 25 °C.

Diode Arrays Feature Summary

  • Electrically isolated base plate design for enhanced safety
  • High surge current capability for robust operation
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in power supplies
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific datasheet version and manufacturer documentation before integration, as component specifications may be subject to revision. Confirm that the SOT-227 package dimensions and terminal configurations align with the intended PCB layout and thermal management requirements. Ensure compliance with RoHS directives if applicable to the target market. Review all absolute maximum ratings to prevent operational stress beyond the specified electrical limits.

Diode Arrays Selection Notes

Select this module when an electrically isolated Schottky rectifier is required for high-efficiency power conversion applications. The SOT-227 package facilitates screw mounting for effective heat dissipation. Consider the 80 V rating and 160 A current capacity against the specific circuit demands. Evaluate the thermal resistance and operating temperature range to ensure reliable performance under expected load conditions and ambient temperatures.

Diode Arrays Part Context

This component belongs to the GeneSiC Semiconductor MBR2X series of silicon Schottky rectifier modules. These devices are designed for general-purpose power rectification where low forward voltage drop and fast switching speeds are beneficial. The series utilizes standard industrial packaging to support various mounting and thermal management strategies common in power electronics systems.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

MBR2X080A080MBR2X080A080
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