MBR30040CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR30040CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 40 V and an average forward current rating of 300 A per package. The device exhibits a maximum forward voltage of 0.70 V at Tj = 100 °C and maintains a thermal resistance from junction to case of 0.40 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 2000 A.

Diode Arrays Feature Summary

• High surge current capability
• Twin Tower package design
• Not ESD sensitive

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in low-voltage high-current circuits
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm terminal configuration details, as datasheets indicate reversed leads for 'R' devices. Confirm availability status directly with authorized distributors or the manufacturer, as discontinuation notices may apply to this product line.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high efficiency in high-current environments. Ensure the system operates within the specified 40 V reverse voltage limit and that thermal management strategies can maintain junction temperatures below 150 °C under peak load conditions.

Diode Arrays Part Context

This module belongs to the MBR300 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with reverse voltages ranging from 20 V to 40 V, all sharing similar current ratings and package styles designed for robust performance in industrial power electronics.

Diode Arrays Replacement Considerations

Compatible substitutes include MBR30020CTR and MBR30035CTR from the same series, provided the lower reverse voltage ratings are acceptable for the circuit design.