Diode Arrays MBR30H60CTG product image

MBR30H60CTG

$0.60
  • Description:DIODE ARRAY SCHOT 60V 15A TO-220
  • Series:SWITCHMODE™

SKU:64364f9f91a7 Category: Brand:

  
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MBR30H60CTG is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOT 60V 15A TO-220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR30H60CTG

  • Description:DIODE ARRAY SCHOT 60V 15A TO-220
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube,Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:620 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:300 µA @ 60 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR30H60CTG

MBR30H60CTG

Diode Arrays Overview

The MBR30H60CTG is a silicon Schottky barrier rectifier manufactured by onsemi, designed for high-efficiency switch-mode power applications. It features a dual anode common cathode configuration housed in an I2PAK (TO-220AB) surface-mount package. The device supports a repetitive reverse voltage of 60 V and a total average forward current of 30 A, with 15 A per diode leg. Key electrical parameters include a maximum forward voltage of 830 mV at rated current and a surge current capability of 150 A. It operates within a junction temperature range of -55 °C to +175 °C.

Diode Arrays Feature Summary

  • Schottky barrier technology ensures low forward voltage drop and high switching efficiency.
  • Guard-ring design provides enhanced protection against mechanical stress.
  • Dual anode common cathode structure allows for flexible circuit integration.

Diode Arrays Applications

  • Output rectification in switch-mode power supplies
  • Power management systems
  • General-purpose instrumentation

Diode Arrays Procurement Notes

Verify the specific suffix 'G' indicates lead-free and RoHS compliance status as defined by onsemi standards. Confirm the package designation matches the required I2PAK footprint for PCB layout. Check current lifecycle status, as availability may vary based on production schedules. Ensure thermal management solutions align with the 175 °C maximum junction temperature rating for reliable operation.

Diode Arrays Selection Notes

Select this component when a 60 V blocking voltage and 30 A total current capacity are required in a TO-220AB form factor. The Schottky technology is preferred over standard PN junctions for reduced power loss and faster recovery times. Consider the 15 A per leg limit when designing parallel paths or bridge configurations. Verify that the 830 mV forward voltage meets the system's efficiency targets under full load conditions.

Diode Arrays Part Context

This part belongs to onsemi’s SWITCHMODE™ Power Rectifier family, which focuses on high-efficiency power conversion components. The H-series designation typically denotes specific performance characteristics within the brand's Schottky portfolio. It serves as a discrete solution for medium-power applications where compact packaging and robust thermal performance are critical requirements.

Diode Arrays Replacement Considerations

Direct substitutes include MBR30L60CTG and MBR30H60CTHE3/45. Verify pinout compatibility and thermal resistance values before substitution. Ensure the alternative device meets the same 60 V and 30 A ratings. Check for any differences in forward voltage or reverse leakage current that might impact system efficiency.

MBR30H60CTGMBR30H60CTG
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