MBR30L45CT

Diode Arrays Overview

The MBR30L45CT is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a silicon construction with a maximum repetitive peak reverse voltage of 45 V and an average forward rectified current of 15 A per diode leg, totaling 30 A. The device exhibits a low forward voltage drop of 720 mV at 15 A and maintains a low reverse leakage current of 1.2 mA at rated voltage. Designed for high efficiency, it supports a maximum operating junction temperature of 175 °C and includes guard-ring technology for enhanced stress protection.

Diode Arrays Feature Summary

• Dual common cathode configuration for efficient power management
• Low forward voltage drop to minimize conduction losses
• Guard-ring technology provides robust stress protection
• High thermal stability supporting elevated junction temperatures

Diode Arrays Applications

• Output rectification in switch-mode power supplies
• Power management circuits requiring high efficiency
• Free-wheeling rectification in DC-DC converters

Diode Arrays Procurement Notes

Verify the manufacturer designation as Taiwan Semiconductor Corporation against official datasheets, as distributor listings may contain conflicting vendor data. Confirm the specific package type and pinout configuration required for your PCB layout. Ensure that the 45 V rating and 30 A total current capacity align with your system's electrical requirements before procurement.

Diode Arrays Selection Notes

Select this component for applications prioritizing low forward voltage and high efficiency over higher voltage ratings. The 45 V breakdown voltage suits low-voltage DC systems. Consider the TO-220AB or similar through-hole packaging for adequate heat dissipation. Verify that the 175 °C junction temperature capability meets your thermal design constraints compared to standard 150 °C alternatives.

Diode Arrays Part Context

This device belongs to the MBR30L series of dual Schottky barrier rectifiers from Taiwan Semiconductor. It utilizes silicon planar technology optimized for high-speed switching and low power loss. The series is designed to replace bulkier rectifier solutions in compact power supply designs, offering improved performance metrics compared to standard p-n junction rectifiers in similar current ranges.

Diode Arrays Replacement Considerations

Cross-reference with MBR30L45CTG from onsemi for functional equivalence. Verify pin compatibility and thermal characteristics when substituting. Ensure the replacement part meets the same 45 V and 30 A specifications.