Diode Arrays MBR400200CTR product image

MBR400200CTR

$70.04
  • Description:DIODE MOD SCHOT 200V 200A 2TOWER
  • Series:-

SKU:5b5f5c783c2f Category: Brand:

  
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MBR400200CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR400200CTR

  • Description:DIODE MOD SCHOT 200V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR400200CTR

MBR400200CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR400200CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 200 V and an average forward current rating of 400 A per package. The device exhibits a maximum forward voltage of 0.92 V at Tj = 150 °C and 200 A. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating temperature ranges from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with peak forward surge current of 3000 A
  • Twin Tower package design for efficient thermal management
  • Not ESD sensitive for robust handling

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix 'CTR' against official documentation to confirm terminal configuration, as datasheets indicate 'R' devices have reversed leads. Confirm RoHS compliance status through manufacturer declarations. Ensure screw mount compatibility with the Twin Tower package dimensions during mechanical integration planning.

Diode Arrays Selection Notes

Select this component for high-current applications requiring low forward voltage drop at elevated temperatures. The 0.35 °C/W thermal resistance supports efficient heat dissipation in constrained spaces. Evaluate the 200 V reverse voltage rating against system transient spikes to ensure adequate safety margins for reliable operation.

Diode Arrays Part Context

This part belongs to the MBR400 series of silicon Schottky diode modules. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. All models share the same 400 A average forward current capability and Twin Tower packaging format, differing primarily in blocking voltage specifications.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include MBR400150CT and MBR400200CT. Verify terminal pinout orientation when replacing standard CT versions with CTR variants, as lead configurations may differ.

MBR400200CTRMBR400200CTR
$70.04
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