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MCP4151-502E/SN is listed in the Digital Potentiometers range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is IC DGTL POT 5KOHM 257TAP 8SOIC. Review the specifications below when checking this part for your BOM.
The MCP4151-502E/SN is a single-channel digital potentiometer IC from Microchip Technology, housed in an 8-pin SOIC package. It features an 8-bit resistor network providing 256 taps (257 steps) with a nominal resistance of 5 kΩ and ±20% tolerance. The device operates on a supply voltage range of 1.8V to 5.5V and utilizes a standard SPI serial interface for control. It employs volatile RAM memory, resetting the wiper to mid-scale upon power-up or brown-out events. Key electrical characteristics include a typical wiper resistance of 75Ω, a bandwidth of 2 MHz at 5kΩ, and high-voltage tolerant digital inputs up to 12.5V.
Verify the specific suffix 'SN' corresponds to the 8-lead Small Outline Integrated Circuit (SOIC) package with a width of 3.90mm. Confirm that the '-502' code indicates the 5 kΩ resistance value. Ensure the environment supports the extended temperature range of -40°C to +125°C as specified for this device variant.
Select this component when a single-channel, 8-bit digital potentiometer with 5 kΩ resistance is required. The volatile memory type necessitates re-initialization after power cycles if a specific resistance state must be maintained. Ensure the system SPI clock speed does not exceed 10 MHz for VDD ≥ 2.7V or 1 MHz for VDD between 1.8V and 2.7V.
This part belongs to the MCP41XX family of single-resistor network digital potentiometers. It shares the same pinout and interface protocol with other variants in the MCP413X, MCP414X, and MCP416X series, differing primarily in resolution (7-bit vs. 8-bit), memory type (RAM vs. EEPROM), and operating voltage ranges.
Direct functional substitutes within the same package and specification include the MCP4151-502E/P (PDIP) or MCP4151-502E/MS (MSOP). For non-volatile requirements, the MCP4161-502E/SN offers identical electrical performance with EEPROM storage.
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