MJE200STU

Description：TRANS NPN 25V 5A TO-126-3
Series：-

SKU:5e117a47c557 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJE200STU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 5A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE200STU

Description：TRANS NPN 25V 5A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：1.8V @ 1A, 5A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 2A, 1V
Power - Max：15 W
Frequency - Transition：65MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJE200STU

MJE200STU

Single Bipolar Transistors Overview

The MJE200STU is a single NPN epitaxial silicon bipolar junction transistor manufactured by onsemi. It utilizes a TO-126-3 through-hole package designed for flange mounting applications. The device supports a maximum continuous collector current of 5 A and offers a collector-emitter breakdown voltage (VCEO) of 25 V, with a collector-base voltage (VCBO) rating of 40 V and an emitter-base voltage (VEBO) of 8 V. Thermal performance includes a power dissipation capacity of 15 W at 25°C ambient temperature. Electrical characteristics specify a DC current gain (hFE) ranging from 45 to 180, a transition frequency (fT) of 65 MHz, and a collector-emitter saturation voltage of 1.8 V. The component operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

Epitaxial silicon construction providing robust switching capabilities for high-current applications
High thermal stability supporting operation up to 150°C junction temperature
Flange-mountable TO-126-3 package facilitating efficient heat dissipation

Single Bipolar Transistors Applications

General-purpose power switching circuits
Audio amplifier output stages
Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and packaging configurations. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Validate that the TO-126-3 pinout matches the target PCB footprint design requirements. Ensure thermal management solutions align with the specified 15 W power dissipation limits under expected operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring moderate voltage handling with substantial current capacity in a compact form factor. The TO-126-3 package provides a balance between thermal performance and board space efficiency compared to larger packages. Consider the 25 V VCEO rating when determining safety margins for inductive load switching or low-voltage power regulation tasks.

Single Bipolar Transistors Part Context

This part belongs to the MJE200 series of NPN power transistors produced by onsemi. The series is characterized by its use in medium-power applications where reliable switching and amplification are required. The MJE200STU variant specifically denotes the standard tube packaging configuration for this device family.