MJE3439G

Description：TRANS NPN 350V 0.3A TO-126
Series：-

SKU:7dde59d58519 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MJE3439G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 350V 0.3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE3439G

Description：TRANS NPN 350V 0.3A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：300 mA
Voltage - Collector Emitter Breakdown (Max)：350 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)：20µA
DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 20mA, 10V
Power - Max：15 W
Frequency - Transition：15MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MJE3439G

MJE3439G

Single Bipolar Transistors Overview

The MJE3439G is an NPN silicon high-voltage power transistor manufactured by onsemi. It features a collector-emitter sustaining voltage of 350 Vdc and a continuous collector current rating of 0.3 Adc. The device supports a total power dissipation of 15 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 8.33 °C/W. It operates within a junction temperature range of -65 to +150°C. Key electrical characteristics include a minimum DC current gain of 15 at 20 mAdc and a current-gain bandwidth product of 15 MHz.

Single Bipolar Transistors Feature Summary

High current-gain bandwidth product suitable for line-operated equipment requiring high frequency performance
Low output capacitance for improved switching efficiency
Designed for medium power linear and switching applications

Single Bipolar Transistors Applications

Line-operated equipment
High-frequency switching circuits
Linear amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the component datasheet revision and ordering information directly from the manufacturer's official documentation before procurement. Confirm that the specific package marking and pinout configuration match the intended PCB footprint design requirements. Ensure compliance with RoHS standards and lead-free specifications as indicated in the official product data sheet.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require high-voltage handling capabilities combined with moderate current ratings. Consider the thermal management requirements carefully due to the 15 W power dissipation limit and the need for adequate heat sinking. Evaluate the safe operating area curves to ensure the application load lines remain within the specified limits during both steady-state and pulse operations.

Single Bipolar Transistors Part Context

This device belongs to the MJE series of high-voltage power transistors produced by onsemi. It serves as a complementary or standalone option for designs needing robust NPN switching performance. The TO-225 package provides a standardized mounting solution for through-hole assembly in various electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for direct cross-reference recommendations. Verify pin compatibility and electrical parameter equivalence before substituting with alternative part numbers.