MMBV3401LT3

$0.10

Description：DIODE PIN SWITCHING 35V SOT-23
Series：-

SKU:883cea3174bd Category: RF Diodes Brand: onsemi

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Product introduction

MMBV3401LT3 is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE PIN SWITCHING 35V SOT-23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMBV3401LT3

Description：DIODE PIN SWITCHING 35V SOT-23
Series：-
Mfr：onsemi
Package：Bulk
Diode Type：-
Voltage - Peak Reverse (Max)：-
Current - Max：-
Capacitance @ Vr, F：-
Resistance @ If, F：-
Power Dissipation (Max)：-
Operating Temperature：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

RF Diode datasheet and documents for MMBV3401LT3

MMBV3401LT3

RF Diode Overview

The MMBV3401LT3G is a silicon PIN diode designed primarily for VHF band switching applications and general-purpose switching circuits. It features a rugged PIN structure with wirebond construction to ensure optimum reliability. The device is supplied in a surface-mount SOT-23 package (TO-236AB, CASE 318-08). Key electrical characteristics include a reverse voltage rating of 35 Vdc, a maximum forward power dissipation of 200 mW at 25°C ambient temperature, and a junction temperature limit of +125°C. Typical performance metrics specify a diode capacitance of 1.0 pF at 20 Vdc reverse bias and a series resistance of 0.7 ohms at 100 MHz with a 10 mA forward current.

RF Diode Feature Summary

Rugged PIN structure coupled with wirebond construction for optimum reliability
Low capacitance suitable for high-frequency switching applications
Very low series resistance at 100 MHz operation
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

RF Diode Applications

VHF band switching applications
General-purpose switching circuits

RF Diode Procurement Notes

Verify the specific ordering suffix when sourcing this component. The datasheet references MMBV3401LT1G and MMBV3401LT3G as standard Pb-Free packages. Confirm that the requested part number matches the required tape and reel quantity specifications provided by the manufacturer to ensure compatibility with automated assembly processes.

RF Diode Selection Notes

Select this component based on its low capacitance and low series resistance characteristics, which are critical for maintaining signal integrity in VHF frequency bands. Ensure the application circuit operates within the specified maximum ratings, particularly the 35 Vdc reverse voltage and 200 mW power dissipation limits, to guarantee long-term device reliability under expected thermal conditions.

RF Diode Part Context

This component belongs to the silicon PIN diode family manufactured by onsemi. It is housed in an SOT-23 (TO-236AB) surface-mount package. The device is engineered for robust performance in radio frequency environments, leveraging a specialized internal structure to minimize parasitic effects while maintaining high switching speeds.

RF Diode Replacement Considerations

Consult official substitution lists or cross-reference guides from onsemi for verified alternatives. When evaluating potential replacements, ensure that the substitute device maintains equivalent electrical parameters, specifically reverse breakdown voltage, capacitance, and series resistance, to preserve circuit functionality without modification.