Memory IC MSR630AGC-2512 product image

MSR630AGC-2512

  • Description:IC SRAM 1GBIT PAR 676BGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray

SKU:d1d1b1950acb Category: Brand:

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MSR630AGC-2512 is listed in the Memory IC range at ChipApex. The manufacturer field lists MoSys, Inc.. Its product description is IC SRAM 1GBIT PAR 676BGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MSR630AGC-2512

  • Description:IC SRAM 1GBIT PAR 676BGA
  • Series:-
  • Mfr:MoSys, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM, RLDRAM
  • Memory Size:1Gbit
  • Memory Organization:16M x 72
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:-
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:2512-BGA, FCBGA
  • Supplier Device Package:2512-FCBGA (27x27)
  • Access Time:2.7 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MSR630AGC-2512

MSR630AGC-2512

Memory IC Overview

The MSR630AGC-2512 is a 1Gbit RLDRAM memory integrated circuit manufactured by MoSys, Inc. It features a parallel interface with an access time of 2.7 ns and operates at a clock frequency of 1.25 GHz. The device is supplied in a 2512-FCBGA package measuring 27x27 mm. It supports a supply voltage of 1V and functions within an operating temperature range of 0°C to 85°C (TC). This component is designed for high-bandwidth burst applications requiring surface mount installation.

Memory IC Feature Summary

  • Supports RLDRAM technology for high-speed parallel data transfer
  • Integrated into a compact 2512-FCBGA surface mount package
  • Optimized for bandwidth burst memory applications

Memory IC Applications

  • High-performance computing systems
  • Network infrastructure equipment
  • Industrial control systems

Memory IC Procurement Notes

Verify the specific suffix '2512' against official MoSys documentation to confirm the FCBGA package variant and pinout configuration. Ensure compatibility with 1V supply requirements and 0°C to 85°C operating temperatures. Cross-reference the 1.25 GHz clock frequency specifications with system design constraints before procurement.

Memory IC Selection Notes

Select this component when a 1Gbit capacity RLDRAM solution is required for parallel interfaces. Consider the 2.7 ns access time and 1.25 GHz speed for bandwidth-intensive tasks. Verify that the 27x27 mm FCBGA footprint fits the PCB layout and that the 1V power supply aligns with the target system architecture.

Memory IC Part Context

This part belongs to the MoSys RLDRAM family, which utilizes Burst Mode Architecture for efficient data handling. The MSR630 series offers high-density memory solutions suitable for demanding embedded applications. The 2512 designation specifically refers to the Fine-pitch Ball Grid Array package type used in this model.

Memory IC Replacement Considerations

The MSR630AGC-1512 is a documented alternative from the same manufacturer, sharing similar electrical characteristics but potentially differing in package or thermal specifications. Verify pin-to-pin compatibility and parameter alignment before substitution.

MSR630AGC-2512MSR630AGC-2512

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