Memory IC MT29E1T08CUCBBH8-6:B TR product image

MT29E1T08CUCBBH8-6:B TR

  • Description:IC FLASH 1TBIT PARALLEL 152LBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)

SKU:a785d70fdfca Category: Brand:

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MT29E1T08CUCBBH8-6:B TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 1TBIT PARALLEL 152LBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MT29E1T08CUCBBH8-6:B TR

  • Description:IC FLASH 1TBIT PARALLEL 152LBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NAND
  • Memory Size:1Tbit
  • Memory Organization:128G x 8
  • Memory Interface:Parallel
  • Clock Frequency:167 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:152-LBGA (14x18)

Memory IC datasheet and documents for MT29E1T08CUCBBH8-6:B TR

MT29E1T08CUCBBH8-6:B TR

Memory IC Overview

The MT29E1T08CUCBBH8-6:B TR is a 1 Terabit (128 Gigabyte) Multi-Level Cell (MLC) NAND flash memory component manufactured by Micron Technology. It features an asynchronous parallel interface with an 8-bit data bus width, organized as 128G x 8. The device operates within a voltage range of 2.7V to 3.6V and supports temperatures from 0°C to +70°C. It is housed in a 152-pin Low-profile Ball Grid Array (LBGA) package measuring 14x18 mm. This non-volatile memory solution is designed for high-density storage applications requiring robust data retention.

Memory IC Feature Summary

  • High-density 1 Terabit MLC NAND architecture providing substantial non-volatile storage capacity.
  • Asynchronous parallel interface supporting standard 8-bit data bus operations.
  • Industrial temperature range compatibility ensuring reliable performance in varied environments.
  • Compact 152-pin LBGA package design optimized for space-constrained electronic systems.

Memory IC Applications

  • Network communication equipment
  • Security surveillance devices
  • Test and measurement instruments

Memory IC Procurement Notes

Verify the exact suffix configuration against official Micron documentation, as ordering codes define specific electrical and mechanical parameters. Confirm current availability status, as this part may be obsolete or discontinued. Ensure compliance with RoHS directives if required for your region. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Check for any specific handling or storage requirements outlined in the datasheet.

Memory IC Selection Notes

Select this component when a 1 Terabit capacity is required with an asynchronous parallel interface. Consider the 152-pin LBGA form factor for board layout constraints. Evaluate the 0°C to +70°C operating range against environmental conditions. Compare power consumption specifications at 2.7V to 3.6V with system requirements. Verify that the 8-bit data bus width aligns with the host controller's interface capabilities.

Memory IC Part Context

This part belongs to the Micron MT29E series of MLC NAND flash memories. It represents a high-capacity generation designed for enterprise and industrial storage needs. The series typically offers improved endurance and reliability compared to earlier generations. It complements other Micron NAND products like the MT29F series, which may offer different interface types or cell architectures.

Memory IC Replacement Considerations

Check for direct pin-to-pin replacements within the MT29E family with updated suffixes. Verify compatibility with existing PCB footprints and firmware drivers. Consider newer Micron NAND generations if higher endurance or faster access times are needed. Ensure substitute parts maintain the same 152-pin LBGA package dimensions.

MT29E1T08CUCBBH8-6:B TRMT29E1T08CUCBBH8-6:B TR

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