MT29F2T08GELCEJ4-M:C

Memory IC Overview

The MT29F2T08GELCEJ4-M:C is a QLC NAND flash memory device manufactured by Micron Technology. It offers a total capacity of 2 terabits, organized as 256 gigabytes by 8 bits. The component operates at a voltage of 1.2 volts and supports an industrial temperature range from 0°C to +70°C. It utilizes a VBGA package with DDP (Die-on-Die Package) construction for high density.

Memory IC Feature Summary

• High-density QLC NAND architecture for large-scale data storage
• Dual Die-on-Die Package (DDP) configuration
• Industrial temperature rating for robust operation

Memory IC Applications

• Enterprise solid-state drives
• Data center storage arrays
• Cloud infrastructure storage

Memory IC Procurement Notes

Verify the specific suffix 'M' against official Micron documentation to confirm exact binning or packaging variations. Confirm current lifecycle status as availability may be limited. Ensure compatibility with host controllers supporting 2Tb QLC NAND interfaces before procurement.

Memory IC Selection Notes

Select this component for applications requiring maximum storage density in a compact form factor. The 1.2V operation supports power-efficient designs. Verify that the system environment remains within the specified 0°C to +70°C range to ensure reliable performance over the product's operational life.

Memory IC Part Context

This part belongs to Micron's N48R series of QLC NAND flash memories. The series includes variants with capacities ranging from 1Tb to 16Tb. The MT29F2T08GELCEJ4-M:C specifically represents the 2Tb capacity tier within this high-density portfolio, designed for enterprise-grade storage solutions.

Memory IC Replacement Considerations

Direct substitutes include other Micron N48R series parts such as MT29F2T08GELCEJ4-QJ:C or MT29F2T08GELCEJ4-QU:C, provided pinout and electrical specifications match. Cross-vendor replacements require careful interface verification.