Single FETs, MOSFETs MTBV30P06VT4G product image

MTBV30P06VT4G

  • Description:POWER MOSFET -60V -30A 80 MOHM S
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:672025263d06 Category: Brand:

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MTBV30P06VT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is POWER MOSFET -60V -30A 80 MOHM S. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MTBV30P06VT4G

  • Description:POWER MOSFET -60V -30A 80 MOHM S
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:80mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:2190 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):3W (Ta), 125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for MTBV30P06VT4G

MTBV30P06VT4G

Single FETs, MOSFETs Overview

The MTBV30P06VT4G is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 30 A. The device utilizes a D2PAK surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 80 mΩ, a gate threshold voltage up to 4 V, and a maximum power dissipation of 125 W. It operates within a temperature range of -55 °C to +175 °C, with a typical gate charge of 54 nC at 10 V.

Single FETs, MOSFETs Feature Summary

  • Enhancement mode operation for efficient switching control
  • High thermal stability supporting extended operating temperatures
  • Surface-mount construction for automated assembly integration

Single FETs, MOSFETs Applications

  • Power management circuits requiring high-side switching
  • DC-DC converter topologies utilizing P-channel devices
  • Motor driver interfaces for load control

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official manufacturer documentation, as variations in suffixes may indicate different tape-and-reel quantities or specific compliance certifications. Confirm that the D2PAK footprint matches your PCB design guidelines. Ensure that the sourcing channel provides valid traceability for RoHS and halogen-free material declarations required for modern electronic assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a single P-channel switch is required for moderate current applications up to 30 A. The 60 V rating suits low-voltage DC systems. Consider the 80 mΩ on-resistance for conduction loss calculations. The D2PAK package offers a balance between thermal performance and board space compared to smaller packages, suitable for designs where heat dissipation is managed via copper pours.

Single FETs, MOSFETs Part Context

This device belongs to the family of power MOSFETs designed for general-purpose switching applications. It represents a standard silicon-based solution for controlling power flow in electronic systems. The component is distinct from logic-level switches or high-voltage industrial modules, targeting consumer and industrial electronics where reliable P-channel performance is necessary.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible P-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility before replacing to ensure direct interchangeability without circuit modification.

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