NCV5707BDR2G

Overview

The NCV5707BDR2G is an isolated high-current gate driver from onsemi, designed for driving IGBTs and MOSFETs. It features low UVLO thresholds of 8V and 7V. The device operates within a supply voltage range of 10V to 24V. It provides robust isolation capabilities essential for high-power applications. The component is housed in a compact 8-SOIC package suitable for surface mount technology.

Feature Summary

• Provides electrical isolation between control circuitry and power switches
• Features low undervoltage lockout thresholds for reliable startup
• Delivers high current output for fast switching of power devices

Applications

• Industrial motor drives
• Inverter systems
• Switched-mode power supplies

Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the isolated gate driver specifications meet your system's voltage and current demands. Check for any automotive qualification status if applicable to your application environment.

Selection Notes

Select this component when electrical isolation is required between the controller and the power stage. Consider the 8-SOIC package size for space-constrained designs. Ensure the input signal levels are compatible with the driver's logic interface before integration into the circuit.

Part Context

This part belongs to onsemi's family of isolated gate drivers. It is distinct from non-isolated variants like the NCV5705BDR2G by its internal isolation barrier. The NCV5707 series is engineered for applications requiring galvanic isolation to protect low-voltage control electronics from high-voltage transients.

Replacement Considerations

Direct substitutes may include other isolated gate drivers from onsemi or competitors with similar pinouts and isolation ratings. Verify that replacement parts match the UVLO thresholds and output current capabilities. Ensure the replacement package type is compatible with existing PCB footprints.