NJVMJD112T4G

Single Bipolar Transistors Overview

The NJVMJD112T4G is an NPN Darlington power transistor manufactured by onsemi, designed for surface mount applications in the DPAK (TO-252) package. It features a maximum collector-emitter voltage of 100 Vdc and a continuous collector current rating of 2 Adc. The device supports a total power dissipation of 20 W at a case temperature of 25°C and operates within a junction temperature range of -65°C to +150°C. Key electrical characteristics include a DC current gain of 1000 minimum at 2 A, a transition frequency of 25 MHz, and a collector cutoff current of 20 µA.

Single Bipolar Transistors Feature Summary

• NPN Darlington configuration providing high DC current gain suitable for driver stages
• Automotive-grade qualification with AEC-Q101 certification and PPAP capability
• Surface mount construction in a lead-free DPAK package for efficient thermal management

Single Bipolar Transistors Applications

• Switching regulators
• Power converters
• Power amplifiers

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix T4G corresponds to the tape and reel shipping format containing 2,500 units per reel. Confirm the NJV prefix indicates compliance with unique site and control change requirements specific to automotive or specialized industrial applications. Ensure the component meets RoHS standards and Pb-Free specifications as defined in the manufacturer's soldering reference manual.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN switching solution is required in a surface mount footprint. The device offers complementary performance to the MJD117 PNP variant. Designers should account for the thermal resistance from junction to case of 6.25 °C/W and ensure adequate heatsinking to maintain operation within the safe operating area limits under varying load conditions.

Single Bipolar Transistors Part Context

This part belongs to the MJD112 series of complementary Darlington power transistors. It serves as a surface mount alternative to through-hole packages like the TO-220, offering similar electrical characteristics in a compact form factor. The NJV prefix distinguishes it as a product meeting specific automotive quality and supply chain traceability standards.

Single Bipolar Transistors Replacement Considerations

MJD112T4G

Single Bipolar Transistors FAQ

What is the significance of the NJV prefix in the part number?

The NJV prefix indicates that the device is qualified to AEC-Q101 standards and is capable of PPAP submission, catering to automotive and other applications requiring unique site and control change requirements.

How does the power dissipation rating vary with temperature?

The total power dissipation is rated at 20 W at a case temperature of 25°C, with a derating factor of 0.16 W/°C for temperatures above 25°C.