Single Bipolar Transistors NSV60601MZ4T1G product image

NSV60601MZ4T1G

$0.84
  • Description:TRANS NPN 60V 6A SOT223
  • Series:-

SKU:7152bced863c Category: Brand:

  
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NSV60601MZ4T1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 6A SOT223. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for NSV60601MZ4T1G

  • Description:TRANS NPN 60V 6A SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 600mA, 6A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1A, 2V
  • Power - Max:800 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223 (TO-261)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for NSV60601MZ4T1G

NSV60601MZ4T1G

Single Bipolar Transistors Overview

The NSV60601MZ4T1G is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 6 A. The device operates within a temperature range of -55 °C to +150 °C and is housed in an SOT-223-4 surface-mount package. Key electrical specifications include a collector-base voltage of 100 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 2 W. It exhibits a low collector-emitter saturation voltage of 300 mV and a gain-bandwidth product of 100 MHz.

Single Bipolar Transistors Feature Summary

  • Designed for low saturation voltage applications to minimize conduction losses
  • Qualified for automotive electronics under the AEC-Q100 standard
  • Capable of high thermal stability with a maximum junction temperature of 150 °C

Single Bipolar Transistors Applications

  • Automotive electronic control units
  • General-purpose switching circuits
  • Low-voltage regulator implementations

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging configuration. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with high current handling capability is required in a compact surface-mount form factor. The low saturation voltage makes it suitable for efficiency-critical designs. Ensure the application voltage does not exceed the 60 V collector-emitter limit and that thermal management supports the 2 W power dissipation rating within the specified operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the NSS60601MZ4 series of low VCE(sat) transistors from onsemi. These devices are engineered to provide improved performance over standard general-purpose transistors by reducing voltage drop during conduction. The series is widely utilized in industrial and automotive sectors where reliability and thermal performance are critical design constraints.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for verified equivalents. Generic replacements may differ in saturation voltage or current ratings.

NSV60601MZ4T1GNSV60601MZ4T1G
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