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NTD4858N-1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 11.2A/73A IPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD4858N-1G
- Description：MOSFET N-CH 25V 11.2A/73A IPAK
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：11.2A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.2 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1563 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 54.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：IPAK
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for NTD4858N-1G
Single FETs, MOSFETs Overview
The NTD4858N-1G is a surface-mount N-channel power MOSFET from onsemi, housed in a DPAK (TO-252-3) package. It features a drain-source voltage of 25 V and continuous drain currents of 11.2 A at ambient temperature and 73 A at case temperature. The device exhibits a maximum on-resistance of 6.2 mΩ at 10 V gate drive with 30 A current. Gate charge is specified at 19.2 nC at 4.5 V, with an input capacitance of 1563 pF at 12 V. Operating junction temperature ranges from -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Logic-level gate threshold enabling direct drive from standard logic interfaces
- Advanced vertical power MOSFET technology for low conduction losses
- Characterized diode suitable for bridge circuit applications
Single FETs, MOSFETs Applications
- Power supply circuits
- Inductive load control
- PWM motor controls
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official documentation, as variations may exist. Confirm RoHS compliance status through manufacturer declarations. Check component lifecycle status, as this part may be obsolete or subject to change. Ensure thermal management aligns with the specified power dissipation limits for the chosen mounting configuration.
Single FETs, MOSFETs Selection Notes
Select based on the required voltage rating and current handling capabilities within the DPAK form factor. Consider the gate charge and on-resistance values for switching efficiency and drive requirements. Evaluate thermal performance constraints relative to the application's ambient and case temperature conditions.
Single FETs, MOSFETs Part Context
This component belongs to onsemi’s general-purpose power MOSFET portfolio, designed for cost-effective solutions in power management. The NTD series utilizes advanced silicon technology to balance performance and reliability. It serves as a discrete solution for switching applications requiring robust N-channel characteristics.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Verify package compatibility and thermal characteristics before implementation.
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