Single FETs, MOSFETs NTMYS3D8N04CLTWG product image

NTMYS3D8N04CLTWG

$2.36
  • Description:MOSFET N-CH 40V 22A/87A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:a8f2dc473458 Category: Brand:

  
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NTMYS3D8N04CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 40V 22A/87A 4LFPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMYS3D8N04CLTWG

  • Description:MOSFET N-CH 40V 22A/87A 4LFPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Ta), 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):20V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.6W (Ta), 55W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NTMYS3D8N04CLTWG

NTMYS3D8N04CLTWG

Single FETs, MOSFETs Overview

The NTMYS3D8N04CLTWG is a single N-channel power MOSFET from onsemi, utilizing Trench technology. It features a 40 V drain-to-source voltage rating and a maximum continuous drain current of 87 A at TC = 25°C. The device offers a low on-resistance of 3.7 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V. Packaged in an LFPAK4 (5x6 mm) footprint, it supports junction temperatures up to +175°C and includes a body diode with a reverse recovery time of 29 ns.

Single FETs, MOSFETs Feature Summary

  • Trench technology provides low RDS(on) for minimized conduction losses.
  • LFPAK4 package delivers a small 5x6 mm footprint for compact designs.
  • Low gate charge and capacitance reduce driver switching losses.
  • AEC-Q101 qualified for automotive reliability standards.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TWG' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the component meets RoHS compliance and lead-free manufacturing requirements as specified in the datasheet. Ensure the application environment remains within the stated thermal resistance limits for steady-state operation.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and high current capacity are required in a compact surface-mount form factor. The low gate charge characteristics make it suitable for applications requiring fast switching speeds with minimal driver stress. Evaluate thermal management needs based on the junction-to-case resistance provided in the specifications.

Single FETs, MOSFETs Part Context

This part belongs to the NVMYS series of single N-channel MOSFETs designed by onsemi. It utilizes advanced trench gate technology to achieve superior performance metrics compared to standard planar devices. The LFPAK4 package is an industry-standard footprint optimized for efficient heat dissipation and board space conservation.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include NVMYS3D8N04CLTWG and NVMYS3D8N04CL. Verify pinout compatibility and electrical parameters before implementation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 520 A at TA = 25°C with a pulse width of 10 µs.

Is the device suitable for automotive applications?

Yes, the device is AEC-Q101 qualified for automotive use.

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