PHP9NQ20T,127

Single FETs, MOSFETs Overview

The PHP9NQ20T is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a TO-220AB plastic package. It features a drain-source voltage of 200 V and a continuous drain current of 8.7 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 400 mΩ at 10 V gate drive. Total power dissipation reaches 88 W under specified conditions, with a junction-to-mounting base thermal resistance of 1.7 K/W. Gate-drain charge is typically 12 nC.

Single FETs, MOSFETs Feature Summary

• Higher operating power capability resulting from low thermal resistance
• Reduced conduction losses achieved through low on-state resistance
• Suitability for high frequency applications enabled by fast switching characteristics

Single FETs, MOSFETs Applications

• DC-to-DC converters
• General purpose switching
• Motor control circuits
• Off-line switched-mode power supplies
• TV and computer monitor power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm current product status as manufacturing data sheets may indicate obsolescence or lifecycle changes. Ensure design compliance with absolute maximum ratings before integration. Cross-reference pin assignments with the latest schematic symbols provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-channel switching with moderate voltage ratings. The TO-220AB package facilitates direct heatsink mounting for effective thermal management. Evaluate thermal resistance requirements against system heat dissipation capabilities. Consider the internal source-drain diode characteristics for inductive load handling. Verify gate charge parameters against driver circuit capabilities.

Single FETs, MOSFETs Part Context

This device belongs to the Nexperia TrenchMOS standard level FET family. It utilizes planar trench technology to optimize performance metrics within a single-ended plastic package. The product line targets computing, communications, consumer electronics, and industrial sectors. It serves as a discrete power switching solution distinct from integrated power modules.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Check pinout compatibility and thermal resistance values when considering alternatives. Verify that replacement devices meet or exceed the 200 V drain-source voltage rating.