PJMD190N65FR2_L2_00601

Single FETs, MOSFETs Overview

The PJMD190N65FR2_L2_00601 is an N-channel Super Junction MOSFET manufactured by Panjit International Inc. It features a TO-252AA surface-mount package and operates with a drain-source breakdown voltage of 650V. The device supports a continuous drain current of 19.7A at case temperature, with a maximum power dissipation of 168.8W. Key electrical characteristics include a typical on-resistance of 180mΩ and a fast recovery body diode. The component is designed for high-efficiency switching applications within an operating temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Super Junction technology for enhanced switching performance and reduced conduction losses.
• Incorporates a fast recovery body diode characterized by low reverse recovery charge and time.
• Engineered for ruggedness and reliable operation in high-voltage power conversion environments.

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Power factor correction circuits
• Uninterruptible power supply systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status and specific testing conditions referenced in the datasheet prior to integration. Cross-reference ordering information directly with Panjit or authorized distributors to avoid discrepancies in component variants.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage tolerance and efficient thermal management in compact surface-mount layouts. Evaluate the 180mΩ on-resistance against system efficiency targets and ensure the TO-252AA package fits the available PCB real estate. Consider the 19.7A current rating relative to peak load requirements and ambient thermal conditions.

Single FETs, MOSFETs Part Context

This device belongs to Panjit's portfolio of Super Junction MOSFETs, which are engineered to overcome the limitations of traditional planar technologies. The series focuses on minimizing figure-of-merit values for improved energy efficiency. The PJMD190N65FR2 variant specifically addresses the need for robust switching elements in modern power electronics where size and heat dissipation are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.