PJQ2460_R1_00001

$0.58

Description：60V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5337c1d5dfc4 Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

PJQ2460_R1_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 60V N-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJQ2460_R1_00001

Description：60V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：75mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：509 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2020B-6
Package / Case：6-WDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for PJQ2460_R1_00001

PJQ2460_R1_00001

Single FETs, MOSFETs Overview

The PJQ2460_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and high-density cell design to achieve ultra-low on-resistance, specified as less than 75mΩ at VGS=10V and ID=3.2A, or less than 90mΩ at VGS=4.5V and ID=2.0A. The device supports a continuous drain current of 3.2A and a pulsed drain current of 12.8A. It operates within a junction temperature range of -55°C to +150°C and features a DFN2020B-6L package with a typical thermal resistance (RθJA) of 62.5°C/W.

Single FETs, MOSFETs Feature Summary

Advanced Trench Process Technology for enhanced performance
High density cell design engineered for ultra low on-resistance
Lead-free construction compliant with EU RoHS 2.0 standards
Green molding compound formulation adhering to IEC 61249 standard

Single FETs, MOSFETs Applications

DC-DC converters
Power management circuits
Load switches
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix _R1_00001 against official documentation to confirm packaging details, such as the 3K pcs / 7” reel configuration and marking version 460. Ensure compliance requirements match project specifications, specifically confirming lead-free status per EU RoHS 2.0 and green molding compound adherence to IEC 61249. Cross-reference datasheet revision REV.04 dated June 17, 2021, for accurate electrical parameters and mechanical dimensions before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage switching applications. The DFN2020B-6L package offers a small footprint suitable for space-constrained designs. Evaluate the thermal resistance of 62.5°C/W against system heat dissipation capabilities. Consider the gate threshold voltage range of 1.0V to 2.5V for compatibility with logic-level drivers operating at 3.3V or 5V.

Single FETs, MOSFETs Part Context

This part belongs to the PJQ2460 series of N-Channel Enhancement Mode MOSFETs from Panjit International Inc. The series is characterized by its use of advanced trench technology to minimize on-resistance while maintaining robust current handling capabilities in a compact DFN2020B-6L package. It serves as a specialized discrete semiconductor component designed for efficient power switching in modern electronic systems.