PMV45EN2VL

Single FETs, MOSFETs Overview

The PMV45EN2VL is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in a small SOT23 (TO-236AB) plastic surface-mounted package. It features logic-level compatibility and very fast switching capabilities with enhanced power dissipation of 1115 mW. Key electrical parameters include a drain-source voltage of 30 V, a gate-source voltage range of -20 to 20 V, and a continuous drain current of 4.1 A at 25 °C. The typical drain-source on-state resistance is 35 mΩ at VGS = 10 V and ID = 4.1 A.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible for direct interface with standard logic circuits
• Very fast switching performance enabled by Trench MOSFET technology
• Enhanced power dissipation capability within the compact SOT23 package

Single FETs, MOSFETs Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix 'VL' corresponds to the specific tape-and-reel packaging configuration defined in the official Nexperia PMV45EN2 data sheet. Confirm the component meets RoHS compliance standards as indicated in the product documentation. Ensure the selected variant matches the required marking code '%K9' for manufacturing site identification during assembly verification.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and high switching speeds in space-constrained designs. The SOT23 package offers a compact footprint suitable for dense PCB layouts. Consider the 30 V drain-source voltage rating and 4.1 A continuous current capability when designing for low-side switching or relay drive loads operating within the specified temperature range.

Single FETs, MOSFETs Part Context

This device belongs to the PMV45EN series of N-channel Trench MOSFETs from Nexperia. These transistors are designed for computing, communications, consumer, and industrial applications. The series utilizes advanced Trench MOSFET technology to achieve superior performance metrics compared to standard planar MOSFETs, specifically targeting efficiency and speed in modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other N-channel MOSFETs in the SOT23 package with comparable 30 V ratings and logic-level gate thresholds. Verify pinout compatibility (Gate-Source-Drain) and thermal resistance characteristics before substitution. Cross-reference with Nexperia's PMV series equivalents such as PMV45ENA if automotive qualification is not required.