PSMN4R4-80PS,127

$1.41

Description：MOSFET N-CH 80V 100A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tube

SKU:c199529001f6 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN4R4-80PS,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 80V 100A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN4R4-80PS,127

Description：MOSFET N-CH 80V 100A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8400 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：306W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for PSMN4R4-80PS,127

PSMN4R4-80PS,127

Single FETs, MOSFETs Overview

The Nexperia PSMN4R4-80PS,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features an 80 V drain-source voltage rating and a maximum continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a typical drain-source on-state resistance of 4.1 mΩ at VGS = 10 V and ID = 15 A. Total power dissipation reaches 306 W under the same thermal conditions. The component is housed in a TO-220AB (SOT78) plastic package with three leads.

Single FETs, MOSFETs Feature Summary

Low conduction losses resulting from low on-state resistance
Compatibility with standard level gate drive sources

Single FETs, MOSFETs Applications

DC - DC converters
Load switch
Motor control
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Evaluate the total power dissipation capability against the expected mounting base temperature to ensure operation within safe limits. Consider the thermal resistance characteristics for effective heat sinking design. Confirm that the gate drive voltage aligns with the standard level requirements to optimize switching performance and minimize conduction losses during operation.

Single FETs, MOSFETs Part Context

This component belongs to Nexperia's standard level N-channel enhancement mode FET portfolio. It employs TrenchMOS technology to achieve high current handling capabilities within a robust plastic package. The product line targets applications requiring efficient power switching in computing, communications, consumer electronics, and industrial environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference alternative devices based on matching voltage ratings, current capacity, and package dimensions. Ensure any substitute maintains compatible gate threshold levels and thermal resistance values to preserve circuit performance without redesign.