PSMN7R0-100ES,127

Single FETs, MOSFETs Overview

The Nexperia PSMN7R0-100ES,127 is an N-channel enhancement mode MOSFET housed in an I2PAK (SOT226) surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current capacity of 100 A at a mounting base temperature of 25 °C. The device exhibits a typical on-state resistance of 6.8 mΩ at 25 °C and 12 mΩ at 100 °C when driven by a gate-source voltage of 10 V. Designed for high efficiency, it supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 315 mJ.

Single FETs, MOSFETs Feature Summary

• High efficiency achieved through minimized switching and conduction losses
• Compatible with standard level gate drive requirements
• Qualified for operation at elevated junction temperatures up to 175 °C

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Load switching circuits
• Motor control systems
• Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment does not exceed the absolute maximum ratings defined in the datasheet. Ensure thermal management strategies account for the specified thermal resistance values to maintain junction temperature within safe operating limits during continuous operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in industrial or domestic equipment where standard gate drive levels are available. Evaluate the thermal dissipation capabilities against the expected load currents and ambient conditions. Consider the package's mounting base connection to the drain for effective heat sinking solutions.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of standard level N-channel MOSFETs designed for general-purpose power switching applications. The I2PAK package provides a balance between current handling capability and surface-mount convenience, suitable for PCB-based power stages in various electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and package dimensions.

Single FETs, MOSFETs FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The device can withstand a non-repetitive drain-source avalanche energy of 315 mJ under specified test conditions.

How does the on-state resistance vary with temperature?

The typical on-state resistance increases from 6.8 mΩ at 25 °C to 12 mΩ at 100 °C and up to 19 mΩ at 175 °C when measured at a gate-source voltage of 10 V.