PXN8R3-30QLJ

Single FETs, MOSFETs Overview

The PXN8R3-30QL is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology, housed in an MLPAK33 (SOT8002) surface-mounted plastic package. It features a drain-source voltage rating of 30 V and a gate-source voltage range of -20 to 20 V. The device supports a continuous drain current of 11.4 A at 25 °C and a peak pulsed current of 293 A. On-state resistance is specified as 7.1 mΩ typ at VGS=10V and 8.9 mΩ typ at VGS=4.5V. Total gate charge is 5.1 nC typ at VGS=4.5V. Thermal resistance from junction to ambient is 150 K/W in free air.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible for direct drive by standard logic signals
• Trench MOSFET technology providing ultra-low gate charge for high system efficiency
• Superfast switching with soft-recovery characteristics to minimize electromagnetic interference
• MLPAK33 package offering a thermally efficient design within a compact footprint

Single FETs, MOSFETs Applications

• DC to DC conversion
• Battery management systems
• Low-side load switching
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component status remains active for new designs. Ensure compatibility with the intended PCB footprint dimensions and soldering profiles defined in the package outline section of the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and fast switching speeds within a small form factor. Evaluate thermal performance based on the specific PCB copper area and mounting pad size, as thermal resistance varies significantly between free-air and board-mounted conditions. Consider the logic-level gate threshold for compatibility with the driving circuit voltage levels.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of N-channel Trench MOSFETs designed for general-purpose power switching. The MLPAK33 package is engineered for thermal efficiency and space-constrained designs. It utilizes advanced trench technology to achieve low conduction and switching losses compared to standard planar devices.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V rating, N-channel configuration, and MLPAK33 package. Verify pinout compatibility and electrical parameters such as RDS(on) and QG. Cross-reference with other Nexperia parts in the same series or equivalent offerings from other manufacturers ensuring identical package dimensions and thermal characteristics.