R1RW0416DSB-2PI#D0

Memory IC Overview

The R1RW0416DSB-2PI#D0 is a 4Mbit high-speed static random-access memory (SRAM) organized as 256K words by 16 bits. It utilizes CMOS technology with a six-transistor memory cell to achieve fast access times, specifically 10 nanoseconds and 12 nanoseconds variants. The device operates on a single 3.3-volt power supply for both core logic and input/output interfaces. It is housed in a 44-pin Thin Shrink Small Outline Package (TSOP II) designed for surface-mount applications.

Memory IC Feature Summary

• Employs a six-transistor CMOS memory cell structure for high-density storage
• Supports wide 16-bit data bus width configuration
• Features asynchronous parallel interface architecture
• Operates on a unified 3.3V voltage supply

Memory IC Applications

• Cache memory systems requiring high-speed data retrieval
• Buffer memory configurations in embedded processing units
• High-density memory modules in industrial control equipment

Memory IC Procurement Notes

Verify the specific suffix designation carefully during procurement, as variations such as #S1 or #D1 may indicate different packaging formats like cut tape versus reel. Confirm the moisture sensitivity level requirements against your assembly timeline. Ensure the selected variant matches the required access speed specification for your circuit design before finalizing orders.

Memory IC Selection Notes

Select this component when a 16-bit data path is necessary alongside rapid access speeds within a compact surface-mount footprint. The unified 3.3V operation simplifies power distribution compared to dual-voltage alternatives. Consider the TSOP II package dimensions for PCB layout constraints and ensure thermal management aligns with the device's operational temperature range specifications.

Memory IC Part Context

This part belongs to the Renesas R1RW series of high-speed SRAM devices. The series is engineered for applications demanding significant memory density and wide data throughput. These components are typically integrated into complex electronic systems where data integrity and speed are critical performance factors.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in available documentation. Verify compatibility with alternative SRAM devices based on pinout, voltage, and timing parameters.