Memory IC R1WV6416RBG-5SI#B0 product image

R1WV6416RBG-5SI#B0

  • Description:IC SRAM 64MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:f48a7e138724 Category: Brand:

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R1WV6416RBG-5SI#B0 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 64MBIT PARALLEL 48TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for R1WV6416RBG-5SI#B0

  • Description:IC SRAM 64MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM
  • Memory Size:64Mbit
  • Memory Organization:8M x 8, 4M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFBGA
  • Supplier Device Package:48-TFBGA (8.5x11)
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for R1WV6416RBG-5SI#B0

R1WV6416RBG-5SI#B0

Memory IC Overview

The R1WV6416RBG-5SI#B0 is a 64 Mbit Low-Power Static Random Access Memory (LPSRAM) manufactured by Renesas Electronics. It features an asynchronous parallel interface with a maximum access time of 55 ns. The device operates within a supply voltage range of 2.7 V to 3.6 V and supports a maximum power consumption of 60 mA. It is housed in a 48-ball FBGA package suitable for surface mount technology. The component functions reliably across an industrial temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Asynchronous parallel SRAM architecture providing direct data access without clock synchronization requirements.
  • Low-power design optimized for reduced energy consumption during active operations.
  • Industrial-grade operational capability ensuring stability across extended temperature environments.

Memory IC Applications

  • Data buffering in embedded systems requiring fast random access memory.
  • Cache memory implementation in microcontroller-based applications.
  • Temporary storage in battery-powered devices due to low power characteristics.

Memory IC Procurement Notes

Verify the specific suffix #B0 against official Renesas documentation to confirm pinout and electrical specifications, as suffixes often denote package or temperature variations. Confirm end-of-life status and availability through authorized distributors, as this component may be subject to limited supply or obsolescence. Ensure compatibility with existing PCB footprints and thermal management requirements before procurement.

Memory IC Selection Notes

Select this component when a 64 Mbit capacity with 55 ns access speed is required in a compact FBGA form factor. Consider the 2.7 V to 3.6 V operating range for system voltage compatibility. Evaluate the 48-pin FBGA package constraints for board space and soldering processes. Compare against other LPSRAM options if lower power or different organization formats are needed.

Memory IC Part Context

This part belongs to the R1WV6416R series of low-power SRAMs from Renesas Electronics. The series offers various access times and packaging options to suit different design needs. The R1WV6416RBG variant specifically utilizes the FBGA package, distinguishing it from TSOP or TFBGA versions within the same memory density family.

Memory IC Replacement Considerations

Check for direct substitutes within the R1WV6416R series with compatible suffixes. Verify equivalent parts from other manufacturers offering 64 Mbit asynchronous SRAM in FBGA packages with similar timing and voltage specifications.

R1WV6416RBG-5SI#B0R1WV6416RBG-5SI#B0

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