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R6509KND3TL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is HIGH-SPEED SWITCHING, NCH 650V 9. Review the specifications below when checking this part for your BOM.
The R6509KND3TL1 is a third-generation N-channel Super Junction MOSFET manufactured by ROHM Semiconductor. It features a TO-252-3 (DPAK) surface-mount package with a drain-source voltage rating of 650 V and a continuous drain current of 9 A. The device exhibits a typical on-resistance of 585 mΩ at VGS = 10 V, with a total gate charge of 16.5 nC. It supports a maximum power dissipation of 94 W and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'TL1' against the manufacturer's datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical parameters required for the target circuit design. Cross-reference the RoHS compliance status directly with official documentation before procurement.
Select this component for designs requiring high-voltage handling with fast switching speeds. Compare the 585 mΩ on-resistance and 16.5 nC gate charge against alternative devices to balance conduction and switching losses. Confirm that the TO-252-3 package thermal performance meets the system's heat dissipation requirements under maximum load conditions.
This part belongs to ROHM's R6xxxKNx series of high-speed switching power MOSFETs. These components utilize Super Junction technology to achieve superior performance compared to conventional planar MOSFETs. The series is specifically engineered to enhance efficiency in power conversion applications such as PFC and LLC converters.
Consult the manufacturer's replacement guide for verified substitutes. Direct replacements must match the 650V rating, N-channel configuration, and TO-252-3 package. Verify pinout compatibility and electrical parameter equivalence before implementation.
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