RH6L040BGTB1

$2.18

Description：NCH 60V 65A, HSMT8, POWER MOSFET
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2c7f4db3333e Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

RH6L040BGTB1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 60V 65A, HSMT8, POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RH6L040BGTB1

Description：NCH 60V 65A, HSMT8, POWER MOSFET
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：18.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1320 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：59W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-HSMT (3.2x3)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for RH6L040BGTB1

RH6L040BGTB1

Single FETs, MOSFETs Overview

The RH6L040BGTB1 is an N-channel power MOSFET manufactured by ROHM Semiconductor. It features a Drain-Source voltage (VDSS) of 60V and a continuous drain current (ID) of 65A at 25°C silicon limit. The device offers a maximum static drain-source on-state resistance (RDS(on)) of 7.1mΩ at VGS=10V and 11.2mΩ at VGS=4.5V. Power dissipation (PD) is rated at 59W, with a junction temperature range of -55°C to +150°C. It utilizes the HSMT8 surface-mount package.

Single FETs, MOSFETs Feature Summary

Low on-resistance for reduced conduction losses
High power density in small mold HSMT8 package
Pb-free plating compliant with RoHS standards
Halogen-free construction

Single FETs, MOSFETs Applications

Switching circuits
Motor drives
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TB1 corresponds to the required tape and reel packaging configuration before procurement. Confirm that the component meets the intended environmental operating conditions, as it is designed for ordinary electronic equipment rather than automotive or medical applications. Ensure proper ESD protection measures are implemented during handling and storage.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling within a compact footprint. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider gate drive voltage levels, as RDS(on) varies significantly between 4.5V and 10V drive conditions. Verify compatibility with the target PCB layout for the HSMT8 package dimensions.

Single FETs, MOSFETs Part Context

This part belongs to the RH6L040BG series of N-channel power MOSFETs from ROHM. It is designed to offer low on-resistance and high power capability in a small mold package. The product is classified as standard grade and is not recommended for use in automotive equipment or other specific high-reliability applications without prior consultation.