Single FETs, MOSFETs RJK1535DPE-LE product image

RJK1535DPE-LE

$2.59
  • Description:40A, 150V, 0.052OHM, N-CHANNEL M
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:aec9697ff7e5 Category: Brand:

  
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RJK1535DPE-LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is 40A, 150V, 0.052OHM, N-CHANNEL M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RJK1535DPE-LE

  • Description:40A, 150V, 0.052OHM, N-CHANNEL M
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:40A
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):100W
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LDPAK
  • Package / Case:SC-83

Single FETs, MOSFETs datasheet and documents for RJK1535DPE-LE

RJK1535DPE-LE

Single FETs, MOSFETs Overview

The RJK1535DPE-LE is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 150V and a continuous drain current capacity of 40A. The device exhibits a maximum on-resistance (Rds(on)) of 0.052 ohms at 10V gate drive. Designed for high-speed power switching, it offers a power dissipation capability of 100W in an LDPAK surface-mount package.

Single FETs, MOSFETs Feature Summary

  • N-channel silicon construction optimized for high-speed power switching applications
  • Low on-resistance characteristic enabling efficient conduction with minimal power loss
  • Surface-mount LDPAK package designed for automated assembly and thermal management

Single FETs, MOSFETs Applications

  • High-speed power switching circuits
  • DC-DC converter topologies
  • Motor control driver stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm RoHS compliance status and packaging type directly with authorized distributors or the manufacturer. Cross-reference part numbers to avoid counterfeit components and ensure supply chain integrity for production runs.

Single FETs, MOSFETs Selection Notes

Select this component when a 150V N-channel MOSFET with 40A current handling is required. Evaluate the 0.052 ohm on-resistance against thermal constraints in the target application. Ensure the LDPAK package footprint matches the PCB layout specifications and that the gate drive voltage supports the specified Rds(on) performance metrics.

Single FETs, MOSFETs Part Context

This component belongs to Renesas' discrete power transistor portfolio, specifically within the single FET category. It serves as a fundamental building block for power electronics designs requiring robust voltage and current ratings. The LDPAK format distinguishes it from through-hole alternatives, catering to modern surface-mount manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications. Verify pinout compatibility before integration into existing designs.

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