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RJK1535DPE-LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is 40A, 150V, 0.052OHM, N-CHANNEL M. Review the specifications below when checking this part for your BOM.
The RJK1535DPE-LE is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 150V and a continuous drain current capacity of 40A. The device exhibits a maximum on-resistance (Rds(on)) of 0.052 ohms at 10V gate drive. Designed for high-speed power switching, it offers a power dissipation capability of 100W in an LDPAK surface-mount package.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm RoHS compliance status and packaging type directly with authorized distributors or the manufacturer. Cross-reference part numbers to avoid counterfeit components and ensure supply chain integrity for production runs.
Select this component when a 150V N-channel MOSFET with 40A current handling is required. Evaluate the 0.052 ohm on-resistance against thermal constraints in the target application. Ensure the LDPAK package footprint matches the PCB layout specifications and that the gate drive voltage supports the specified Rds(on) performance metrics.
This component belongs to Renesas' discrete power transistor portfolio, specifically within the single FET category. It serves as a fundamental building block for power electronics designs requiring robust voltage and current ratings. The LDPAK format distinguishes it from through-hole alternatives, catering to modern surface-mount manufacturing processes.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications. Verify pinout compatibility before integration into existing designs.
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