S26KS256SDGBHV030

Memory IC Overview

The Infineon S26KS256SDGBHV030 is a 256 Mbit HYPERFLASH NOR memory device featuring an 8-bit parallel interface. It operates at a maximum clock frequency of 133 MHz with a synchronous timing type. The component supports a data bus width of 8 bits and is organized as 32 M x 8. Power supply ranges from 1.7 V to 1.95 V, with a maximum active read current of 180 mA. It utilizes an FBGA-24 package and functions within a temperature range of -40°C to +105°C.

Memory IC Feature Summary

• Supports high-speed sequential burst transactions with configurable wrapped or linear burst lengths for optimized data throughput.
• Integrates embedded Error Correction Code (ECC) logic capable of correcting single-bit errors and detecting two-bit errors within half-page units.
• Includes hardware-accelerated Cyclic Redundancy Check (CRC) calculation capabilities over user-defined address ranges.
• Provides advanced sector protection mechanisms utilizing both volatile and non-volatile methods for each memory sector.

Memory IC Applications

• Automotive infotainment systems requiring robust data storage
• Industrial control applications needing high-speed code execution
• Consumer electronics devices utilizing boot code storage

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm voltage levels, temperature grades, and package variations. Ensure compatibility with system power rails and thermal requirements before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a high-density NOR flash solution with a low-pin-count DDR interface is required. It is suitable for designs prioritizing sustained read throughput and integrated data integrity features such as ECC and CRC without external processing overhead.

Memory IC Part Context

This part belongs to the S26KS family of HYPERFLASH memories manufactured by Infineon Technologies. These devices utilize MIRRORBIT technology to achieve high density in compact packages. The KS series specifically targets industrial and automotive environments with extended temperature ranges and rigorous qualification standards.

Memory IC Replacement Considerations

S26KS256SDABHB030

Memory IC FAQ

How does the DCARS feature improve signal integrity?

The DDR Center Aligned Read Strobe (DCARS) functionality allows independent phase shifting of the RWDS signal relative to the clock inputs, optimizing setup and hold times for data validity.

What happens if multiple writes occur in the same half-page without an erase?

Programming within the same half-page more than once disables the embedded ECC functionality for that page because the ECC syndrome becomes invalid.