S26KS512SDGBHA030

Memory IC Overview

The Infineon S26KS512SDGBHA030 is a 512 Mbit (64 MB) HYPERFLASH™ NOR flash memory device featuring the HYPERBUS™ interface. It operates with a 1.8 V core and I/O voltage, utilizing an 8-bit data bus and differential clock inputs (CK, CK#). The component supports a maximum clock rate of 166 MHz at 1.8 V, enabling sustained read throughput up to 333 MBps. Key electrical parameters include a 96 ns initial random read access time and a supply voltage range of 1.7 V to 1.95 V. It is housed in a 24-ball FBGA package.

Memory IC Feature Summary

• Supports high-speed DDR data transfers using the HYPERBUS™ protocol with configurable burst characteristics.
• Integrates embedded Error Correction Code (ECC) for one-bit error correction and two-bit error detection.
• Includes hardware-accelerated Cyclic Redundancy Check (CRC) calculation capabilities.
• Features advanced sector protection methods and a dedicated one-time programmable array.

Memory IC Applications

• Automotive telematics control units requiring AEC-Q100 compliance
• Industrial Human-Machine Interface (HMI) systems
• Machine vision applications demanding high read throughput

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required voltage level and package dimensions. Confirm the automotive grade qualification status if operating within strict temperature ranges. Ensure compatibility with the host system's HYPERBUS™ controller signals, particularly regarding differential clock requirements. Review the datasheet for moisture sensitivity levels and recommended soldering profiles prior to assembly.

Memory IC Selection Notes

Select this model for designs requiring a 1.8 V I/O interface with differential clock signaling. It is suitable for applications needing high sustained read bandwidth via the HYPERBUS™ protocol. Consider the integrated ECC and CRC features for enhanced data integrity without external processing overhead. Verify that the 24-ball FBGA footprint aligns with the PCB layout constraints.

Memory IC Part Context

This component belongs to the S26KS family of HYPERFLASH™ devices, which are part of Infineon's broader portfolio of high-speed NOR flash memories. The family includes variants with different densities and voltage options, such as 3.0 V versions. These devices utilize MIRRORBIT™ technology to achieve high density in compact packages.

Memory IC Replacement Considerations

S26KS512SDGBHI030