S29GL128S11DHVV20

Memory IC Overview

The S29GL128S11DHVV20 is a 128 Mbit NOR flash memory device from the GL-S family, fabricated on 65-nm MIRRORBIT™ Eclipse technology. It features a 16-bit data bus and operates with a single supply voltage ranging from 2.7 V to 3.6 V. The device provides a random access time of 100 ns and a page access time of 15 ns. It includes a 512-byte write buffer for efficient programming and supports asynchronous read operations. The component is designed for industrial applications within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Utilizes 65-nm MIRRORBIT™ Eclipse technology for high density and performance.
• Features a versatile I/O interface supporting a wide voltage range from 1.65 V to VCC.
• Includes an internal hardware ECC mechanism for single-bit error correction during initial access.
• Supports advanced sector protection with both volatile and non-volatile methods.

Memory IC Applications

• Embedded systems requiring execute-in-place (XIP) capabilities
• Industrial control applications needing reliable non-volatile storage
• Automotive electronics compliant with AEC-Q100 standards

Memory IC Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type, temperature grade, and lead-free status. Ensure compatibility with system voltage requirements and interface timing specifications before integration. Cross-reference part numbers with current datasheets to avoid discrepancies in pinout or electrical characteristics.

Memory IC Selection Notes

Select this component for designs requiring fast page access times and robust data integrity features. The integrated ECC and advanced sector protection make it suitable for critical data storage. Consider the 16-bit bus width and asynchronous interface when designing the host system controller. Verify that the operating temperature range meets the environmental constraints of the target application.

Memory IC Part Context

This device belongs to the GL-S family of 3.0 V core NOR flash memories. The family offers densities from 128 Mb to 1 Gb, combining XIP speed with data storage density. The GL-S series is characterized by its uniform sector architecture and support for common flash interface (CFI) parameter tables for flexible driver implementation.

Memory IC Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers within the GL-S family. Ensure any replacement matches the required density, interface type, and package dimensions. Verify that alternative parts meet the same electrical and thermal specifications for direct integration.