S29PL064J55BFI120

Memory IC Overview

The Infineon S29PL064J55BFI120 is a 64 Mbit (4M x 16-bit) parallel NOR flash memory device from the PL-J series. It operates on a single 3.0 V supply with a range of 2.7 V to 3.6 V for read, erase, and program functions. The device features a 55 ns random access time and a 20 ns page access time. It utilizes an 8.15 mm x 6.15 mm 48-ball Fine-pitch BGA package (VBK048). Key architectural features include Simultaneous Read/Write operation across four banks with zero latency switching, Enhanced VersatileIO (VIO) support, and a Secured Silicon Sector region.

Memory IC Feature Summary

• Simultaneous Read/Write architecture allows continuous reading from one bank while executing erase or program operations in another bank with zero latency.
• Enhanced VersatileIO (VIO) control enables output voltage generation and input voltage tolerance determination based on the VIO pin voltage.
• Secured Silicon Sector provides up to 128 words accessible via command sequence, including factory-locked and customer-lockable segments.
• Flexible FlexBank architecture divides memory into four separate banks supporting simultaneous operations.

Memory IC Applications

• Battery-powered applications requiring single power supply operation
• Systems needing high-performance code execution and data storage
• Applications requiring background erase and program operations

Memory IC Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required package type and temperature range. Check for End-of-Life status as discontinuation notifications may apply. Ensure compatibility with existing system voltage levels and interface requirements before procurement.

Memory IC Selection Notes

Select this model for designs requiring 64 Mbit density with a 16-bit data bus width. The 55 ns speed bin is suitable for high-performance asynchronous interfaces. Consider the 48-ball FBGA package constraints for PCB layout. Verify that the industrial temperature range (-40°C to +85°C) meets environmental specifications.

Memory IC Part Context

This component belongs to the S29PL-J family of 3.0 V Page Mode and Simultaneous Read/Write Flash memories. The family includes 128 Mbit, 64 Mbit, and 32 Mbit variants. These devices are manufactured on 110-nm process technology and are compatible with JEDEC 42.4 standards. The PL-J series supports both top and bottom boot block configurations.

Memory IC Replacement Considerations

S29PL064J55BFI070 is a confirmed substitute within the same product family offering identical electrical characteristics and functionality.