S29PL064J60BAW122

Memory IC Overview

The Infineon S29PL064J60BAW122 is a 64 Mbit (4M x 16-bit) parallel NOR flash memory device from the PL-J family. It operates on a single 3.0 V power supply with a range of 2.7 V to 3.6 V for read, program, and erase operations. The device features a 60 ns access time and utilizes an 8.15 mm x 6.15 mm 48-ball Fine-pitch BGA package. It supports simultaneous Read/Write operations across four banks with zero latency switching.

Memory IC Feature Summary

• Simultaneous Read/Write architecture allows continuous reading from one bank while executing erase or program functions in another bank with zero latency.
• FlexBank organization divides memory into four separate banks, enabling two simultaneous operations per device.
• Enhanced VersatileI/O control determines output voltage and input tolerance based on the VIO pin voltage.
• Includes a secured silicon sector region accessible via command sequences for factory-locked and customer-lockable data.

Memory IC Applications

• Battery-powered applications requiring single-supply operation
• Systems needing high-performance page mode access
• Industrial environments requiring robust sector protection

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current valid combinations list, as availability may vary by region. Confirm that the required speed bin and temperature grade match the application specifications. Ensure compatibility with existing PCB layouts regarding the 48-ball FBGA package dimensions and pinout configuration before finalizing procurement.

Memory IC Selection Notes

Select this component when a 64 Mbit density with a 16-bit interface is required. The 60 ns speed option provides a balance between performance and power consumption. Consider the FlexBank architecture if independent sector management is needed. Verify that the industrial temperature range meets the operational environment requirements.

Memory IC Part Context

This part belongs to the S29PL-J series, which is manufactured using 110-nm process technology. The series includes 128 Mbit, 64 Mbit, and 32 Mbit variants. It is designed for applications requiring high reliability and flexible memory organization. The device is backward compatible with standard JEDEC command sets.

Memory IC Replacement Considerations

S29PL064J55BFI070

Memory IC FAQ

What is the maximum number of simultaneous operations supported?

The device supports up to two simultaneous operations at any one time across its four banks.

How is the I/O voltage level determined?

The I/O voltage level is determined by the voltage applied to the VIO pin, which can be set to 3.0 V for this device.