Memory IC S70KL1282DPBHB030 product image

S70KL1282DPBHB030

$3.96
  • Description:IC PSRAM 128MBIT HYPERBUS 24FBGA
  • Series:HYPERRAM™ KL
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:8243ebc30317 Category: Brand:

  
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S70KL1282DPBHB030 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC PSRAM 128MBIT HYPERBUS 24FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S70KL1282DPBHB030

  • Description:IC PSRAM 128MBIT HYPERBUS 24FBGA
  • Series:HYPERRAM™ KL
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:PSRAM
  • Technology:PSRAM (Pseudo SRAM)
  • Memory Size:128Mbit
  • Memory Organization:16M x 8
  • Memory Interface:HyperBus
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:36ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 105°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:24-VBGA
  • Supplier Device Package:24-FBGA (6x8)
  • Access Time:36 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S70KL1282DPBHB030

S70KL1282DPBHB030

Memory IC Overview

The Infineon S70KL1282DPBHB030 is a 128 Mb HYPERRAM self-refresh DRAM (PSRAM) featuring a HYPERBUS interface. It supports 1.8 V and 3.0 V operation with a maximum clock rate of 200 MHz, achieving data throughput up to 400 MBps. The device utilizes a 24-ball FBGA package and offers an initial access time of 35 ns. It operates within an industrial temperature range of -40°C to +105°C.

Memory IC Feature Summary

  • Self-refresh DRAM architecture eliminating external refresh management
  • HYPERBUS interface supporting linear and wrapped burst sequences
  • Bidirectional read-write data strobe for latency indication and masking
  • Configurable output drive strength and hybrid sleep power modes

Memory IC Applications

  • Automotive infotainment systems requiring high-speed memory
  • Industrial applications needing robust PSRAM performance
  • Graphics and data-intensive operations in embedded controllers

Memory IC Procurement Notes

Verify the specific ordering suffix DPBHB030 against the latest Infineon datasheet to confirm package type, temperature grade, and interface voltage compatibility. Ensure host controller timing parameters align with the specified 35 ns access time and 200 MHz clock rate requirements before finalizing procurement.

Memory IC Selection Notes

Select this component when a low-pin-count, high-bandwidth memory solution is required for space-constrained designs. The dual-die stacked architecture provides 128 Mb density in a compact 24-ball FBGA form factor. Consider the hybrid sleep mode for power-sensitive applications and verify AEC-Q100 qualification if automotive reliability standards are mandatory.

Memory IC Part Context

This part belongs to the S70KL1282 series of HYPERRAM devices from Infineon Technologies. It represents a pseudo-static RAM solution combining DRAM density with SRAM simplicity. The KL family is designed for high-throughput applications where minimal interface complexity and low power consumption are critical design constraints.

Memory IC Replacement Considerations

S70KL1282DPBHB020

Memory IC FAQ

Does the S70KL1282DPBHB030 support differential clocks?

Yes, the device supports optional differential clocking using CK and CK# signals, though single-ended clocking is also supported.

What is the maximum data throughput of this device?

The device achieves a maximum data throughput of 400 MBps (3,200 Mbps) when operating at the maximum clock rate of 200 MHz.

S70KL1282DPBHB030S70KL1282DPBHB030
$3.96
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