SBR30A60CTB-13

Diode Arrays Overview

The SBR30A60CTB-13 is a Super Barrier Rectifier diode manufactured by Diodes Incorporated, housed in a TO263AB (D2PAK) surface-mount package. It features a dual anode common cathode configuration with a peak repetitive reverse voltage of 60V and a total average rectified output current of 30A (15A per leg). The device exhibits a maximum forward voltage drop of 0.63V at 15A and +25°C, alongside a maximum reverse leakage current of 100mA at +125°C. It supports a non-repetitive peak forward surge current of 180A and operates within a temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

• Patented Super Barrier Rectifier technology provides superior avalanche capability compared to standard Schottky diodes for rugged reliability.
• Ultra-low forward voltage drop ensures better efficiency and cooler operation under load.
• Reduced high-temperature reverse leakage increases reliability against thermal runaway failure during high-temperature operation.

Diode Arrays Applications

• Polarity protection circuits
• Free-wheeling or re-circulating diodes
• High-speed switching applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix '-13' corresponds to tape and reel packaging containing 800 pieces per reel. Confirm that the component meets RoHS compliance standards and is halogen-free. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to the manufacturer's standard terms and conditions.

Diode Arrays Selection Notes

Select this component when a surface-mount solution is required for high-current rectification with low forward voltage characteristics. The TO263AB package offers a thermal resistance of 2°C/W junction-to-case, suitable for applications requiring efficient heat dissipation. Verify that the 60V reverse voltage rating aligns with the circuit's peak repetitive reverse voltage requirements.

Diode Arrays Part Context

This part belongs to the SBR30A series of Super Barrier Rectifiers from Diodes Incorporated. It utilizes silicon technology to combine the low forward voltage of a Schottky diode with the high-temperature stability and avalanche ruggedness of a PN junction diode. The 'B' suffix indicates the dual anode common cathode configuration within the TO263AB case.

Diode Arrays Replacement Considerations

The automotive-compliant variant SBR30A60CTBQ serves as a qualified alternative for applications requiring AEC-Q100/101 qualification and IATF 16949 manufacturing facilities. Standard tube-packaged versions include SBR30A60CTB and SBR30A60CTB-G.

Diode Arrays FAQ

What is the maximum thermal resistance from junction to case?

The maximum thermal resistance (RθJC) is 2°C/W per leg when mounted on a Polymide substrate with a 125mm² copper pad.

How does the leakage current behave at elevated temperatures?

The maximum reverse leakage current increases to 100mA at a junction temperature of +125°C, compared to 0.5mA at +25°C.

Is this component suitable for automotive applications?

While designed to meet stringent automotive requirements, the standard SBR30A60CTB-13 is not explicitly AEC-Q101 qualified. For automotive-specific change control and qualification, the SBR30A60CTBQ version should be used.