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SCT3120AW7TL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 650V 21A TO263-7. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCT3120AW7TL
- Description：SICFET N-CH 650V 21A TO263-7
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id：5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 18 V
- Vgs (Max)：+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：100W
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Single FETs, MOSFETs datasheet and documents for SCT3120AW7TL
Single FETs, MOSFETs Overview
The SCT3120AW7TL is a silicon carbide (SiC) N-channel enhancement-mode MOSFET manufactured by Rohm Semiconductor. It features a 650V drain-source voltage rating and a continuous drain current of 21A at case temperature. The device exhibits a maximum on-resistance of 156 milliohms at 18V gate drive and 6.7A, with a total power dissipation of 103W. It operates within a junction temperature range up to 175°C and utilizes a TO-263-7 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes silicon carbide material for high thermal stability and low conduction losses
- Features enhanced mode operation for efficient switching control
- Designed for robust performance under high voltage conditions
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Solar micro-inverters
- Uninterruptible power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix AW7TL against official datasheets to confirm the TO-263-7 package configuration. Ensure compatibility with RoHS standards and check for any automotive qualification requirements if intended for vehicle applications. Confirm availability through authorized distributors as supply status may vary.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low on-resistance and high-temperature operation in compact surface-mount layouts. Compare the 156 milliohm resistance and 21A current rating against circuit demands. Consider the 175°C junction limit for thermal management strategies in dense PCB assemblies.
Single FETs, MOSFETs Part Context
This part belongs to the SCT series of silicon carbide MOSFETs from Rohm. These devices are engineered to replace traditional silicon counterparts in power conversion applications, offering superior efficiency and reduced heat generation due to the wide bandgap properties of silicon carbide.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent SiC MOSFETs with matching 650V ratings and TO-263-7 packages. Verify pinout compatibility and electrical parameters before replacing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
