SI4634DY-T1-GE3

$1.77

Description：MOSFET N-CH 30V 24.5A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a0ddb043019d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4634DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 24.5A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4634DY-T1-GE3

Description：MOSFET N-CH 30V 24.5A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 5.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4634DY-T1-GE3

SI4634DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si4634DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage rating of 30 V and a continuous drain current of 24.5 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance of 0.0052 Ω at VGS = 10 V and 0.0067 Ω at VGS = 4.5 V. Total gate charge is typically 21.5 nC at VGS = 4.5 V and 45.5 nC at VGS = 10 V. Operating junction temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Manufactured using halogen-free materials compliant with IEC 61249-2-21 standards
Includes 100% testing for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Buck converter circuits
Synchronous rectification as a secondary rectifier
Notebook computer power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance when sourcing components. Confirm that the SO-8 narrow package dimensions align with your printed circuit board layout requirements. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-case thermal resistance ratings under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses at standard logic-level gate voltages. Evaluate the 30 V drain-source breakdown voltage against peak transient line or bus voltages. Consider the 24.5 A continuous current capability relative to the expected load profile and available cooling methods to maintain safe operating junction temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4 series of N-channel MOSFETs. It is designed for surface-mount assembly in compact electronic designs. The device integrates a body diode capable of handling pulsed forward currents up to 70 A.