SI4848BDY-T1-GE3

$0.66

Description：N-CHANNEL 150-V (D-S) MOSFET SO-
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4f67ac8f3414 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4848BDY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 150-V (D-S) MOSFET SO-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4848BDY-T1-GE3

Description：N-CHANNEL 150-V (D-S) MOSFET SO-
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：3.7A (Ta), 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：89mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 4.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4848BDY-T1-GE3

SI4848BDY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4848BDY-T1-GE3 is a single N-channel power MOSFET utilizing TrenchFET Gen V technology. It features a 150 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum on-state resistance of 0.089 Ω at VGS = 10 V and 0.110 Ω at VGS = 6 V, with a typical total gate charge of 3.7 nC at VGS = 6 V. Continuous drain current reaches 5 A at TC = 25 °C. Packaged in an SO-8 surface-mount footprint, it supports high-efficiency switching applications.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen V power MOSFET architecture
100% Rg tested for reliability
Lead (Pb)-free and halogen-free construction

Single FETs, MOSFETs Applications

DC / DC converters
Boost converters
LED backlighting
PD switch
Load switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-T1-GE3' against official documentation to confirm tape-and-reel packaging and compliance status. Confirm that the SO-8 package dimensions match the design requirements. Ensure the component meets RoHS directives as indicated by the 'GE3' designation. Validate thermal management strategies based on the specified junction-to-ambient and junction-to-foot resistance values.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 150 V blocking capability with low conduction losses. The low gate charge facilitates efficient drive circuitry. Evaluate thermal performance using the provided junction-to-ambient resistance data for PCB-mounted configurations. Consider the body diode reverse recovery characteristics if used in synchronous rectification or inductive load switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4848 series of N-channel MOSFETs. It shares the SO-8 package form factor with other devices in the family but offers distinct electrical parameters optimized for mid-voltage power switching. The marking code '4848B' identifies the specific variant within the manufacturing traceability system.