SI7114DN-T1-E3

$2.52

Description：MOSFET N-CH 30V 11.7A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:857c25c668c2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7114DN-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 11.7A PPAK1212-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7114DN-T1-E3

Description：MOSFET N-CH 30V 11.7A PPAK1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SI7114DN-T1-E3

SI7114DN-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7114DN-T1-E3 is a single N-Channel Power MOSFET utilizing TrenchFET Gen II technology. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 18.3 A at 25 °C. The device exhibits a low on-state resistance of 7.5 mΩ at VGS = 10 V and 10 mΩ at VGS = 4.5 V. Packaged in the compact PowerPAK 1212-8 surface-mount format, it offers a typical total gate charge of 12.5 nC and supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET Gen II technology for optimized switching performance
Features a leadless PowerPAK 1212-8 package with a low profile for efficient thermal dissipation
Includes 100% Rg testing to ensure consistent gate drive characteristics

Single FETs, MOSFETs Applications

Synchronous rectification circuits

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required environmental compliance level. The -E3 suffix indicates lead-free construction, while the -GE3 suffix denotes both lead-free and halogen-free status. Confirm the exact suffix aligns with project specifications before procurement to ensure correct material composition.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints require a small footprint without compromising thermal management capabilities. The PowerPAK 1212-8 package provides superior thermal performance compared to standard SO-8 or TSSOP packages. Ensure the application voltage does not exceed the 30 V drain-source rating and verify gate drive levels support the specified on-resistance thresholds.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7114 series of fast-switching N-channel MOSFETs. It is designed for high-efficiency power conversion applications where low conduction losses and rapid switching transitions are critical. The device integrates advanced trench gate architecture to minimize gate charge and on-state resistance within a highly compact surface-mount form factor.