SI7174DP-T1-GE3

$3.53

Description：MOSFET N-CH 75V 60A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2a8ee037fcb7 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7174DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 75V 60A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7174DP-T1-GE3

Description：MOSFET N-CH 75V 60A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2770 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：6.25W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7174DP-T1-GE3

SI7174DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7174DP-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET technology. It features a 75 V drain-source voltage rating and a maximum continuous drain current of 60 A at a case temperature of 25 °C. The device exhibits a typical on-state resistance of 7 mΩ at VGS = 10 V. Packaged in a leadless PowerPAK SO-8, it supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
Leadless PowerPAK SO-8 package design
Halogen-free construction

Single FETs, MOSFETs Applications

Primary side switching
Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and specific ordering suffixes against official Vishay documentation before procurement. Confirm that the lead-free and halogen-free attributes align with project requirements. Ensure compatibility with recommended soldering profiles for the PowerPAK SO-8 package to maintain reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 75 V breakdown voltage with low conduction losses. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Verify gate charge characteristics against driver capabilities to ensure efficient switching performance within the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7174DP series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 footprint, which provides enhanced thermal dissipation compared to standard SO-8 packages while maintaining pin compatibility. The device is manufactured using silicon technology.