Single FETs, MOSFETs SIR150DP-T1-RE3 product image

SIR150DP-T1-RE3

$0.94
  • Description:MOSFET N-CH 45V 30.9A/110A PPAK
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:52f64edf9512 Category: Brand:

  
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SIR150DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 45V 30.9A/110A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR150DP-T1-RE3

  • Description:MOSFET N-CH 45V 30.9A/110A PPAK
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):45 V
  • Current - Continuous Drain (Id) @ 25°C:30.9A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:2.71mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
  • Vgs (Max):+20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):5.2W (Ta), 65.7W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR150DP-T1-RE3

SIR150DP-T1-RE3

Single FETs, MOSFETs Overview

The SiR150DP is a Vishay Siliconix N-Channel 45 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source breakdown voltage of 45 V and a continuous drain current of 110 A at TC = 25 °C. The device offers a typical total gate charge of 21.4 nC and an on-state resistance of 2.71 mΩ at VGS = 10 V. Packaged in a leadless PowerPAK SO-8, it supports a junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET Gen IV power MOSFET architecture
  • Optimized for low total gate charge and output charge
  • 100% tested for gate resistance and single pulse avalanche capability

Single FETs, MOSFETs Applications

  • Synchronous rectification
  • High power density DC/DC conversion
  • Motor drive control

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package configuration. Confirm compliance with RoHS and halogen-free material standards as defined by the manufacturer. Ensure the component is sourced from authorized channels to guarantee authenticity and traceability against the official datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling within a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-case resistance. Verify that the application's gate drive voltage aligns with the threshold and on-resistance characteristics provided in the static specifications.

Single FETs, MOSFETs Part Context

This part belongs to the SIR series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8 package, which provides a leadless design compatible with standard SO-8 land patterns while offering superior thermal performance compared to traditional leaded packages.

Single FETs, MOSFETs Replacement Considerations

Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package compatibility or generic parameter ranges.

SIR150DP-T1-RE3SIR150DP-T1-RE3
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