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SIR150DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 45V 30.9A/110A PPAK. Review the specifications below when checking this part for your BOM.
The SiR150DP is a Vishay Siliconix N-Channel 45 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source breakdown voltage of 45 V and a continuous drain current of 110 A at TC = 25 °C. The device offers a typical total gate charge of 21.4 nC and an on-state resistance of 2.71 mΩ at VGS = 10 V. Packaged in a leadless PowerPAK SO-8, it supports a junction temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix matches the required package configuration. Confirm compliance with RoHS and halogen-free material standards as defined by the manufacturer. Ensure the component is sourced from authorized channels to guarantee authenticity and traceability against the official datasheet specifications.
Select this component for designs requiring high current handling within a compact surface-mount footprint. Evaluate thermal management requirements based on the specified junction-to-case resistance. Verify that the application's gate drive voltage aligns with the threshold and on-resistance characteristics provided in the static specifications.
This part belongs to the SIR series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8 package, which provides a leadless design compatible with standard SO-8 land patterns while offering superior thermal performance compared to traditional leaded packages.
Consult the official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package compatibility or generic parameter ranges.
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