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SN74V273-6GGM is listed in the FIFOs Memory range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC FIFO SYNC 32KX9 4.5NS 100BGA. Review the specifications below when checking this part for your BOM.
The SN74V273-6GGM is a high-speed, deep CMOS first-in, first-out (FIFO) memory device operating at 3.3 V. It provides a storage capacity of 16384 words by 18 bits or 32768 words by 9 bits. The component supports independent read and write clocks with frequencies up to 166 MHz and features a 6 ns read/write cycle time. It includes user-selectable bus sizing for matching unequal data widths and offers configurable timing modes.
Verify the specific suffix '6GGM' against the manufacturer's official documentation to confirm package type and pinout compatibility. Ensure the design supports the required 3.3 V supply voltage and check signal integrity for high-frequency clock inputs up to 166 MHz. Confirm that the GGM package dimensions fit the target PCB layout constraints.
Select this component when deep memory depth combined with high-speed operation is required. It is suitable for applications needing independent read and write clocks and flexible data width conversion between 9-bit and 18-bit buses. Consider the FWFT mode if low latency for the first word is critical for the system timing requirements.
This device belongs to the SN74V series of high-performance submicron CMOS FIFO memories from Texas Instruments. The family includes variants with different depths such as the SN74V263, SN74V283, and SN74V293. These components are designed for glueless interfacing with high-speed processors like DSPs.
SN74V263-6GGM
The input and output bus widths are selected during the master reset cycle using the IW (Input Width) and OW (Output Width) pins to configure the ports for either 9-bit or 18-bit operation.
The retransmit feature allows previously read data to be accessed again by resetting the read pointer to the first location of the memory array without disturbing the write pointer.
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