SN74V293-10GGM

FIFOs Memory Overview

The SN74V293-10GGM is a high-speed, deep first-in, first-out (FIFO) memory fabricated using Texas Instruments' submicron CMOS technology. It provides a storage capacity of 65536 x 18 bits or 131072 x 9 bits. The device operates at frequencies up to 166 MHz with a 6 ns read/write cycle time and supports independent read and write clocks. It features user-selectable input and output bus widths ranging from 9-bit to 18-bit, configurable big-endian or little-endian byte representation, and 5-V tolerant inputs.

FIFOs Memory Feature Summary

• Supports flexible bus matching with selectable 9-bit or 18-bit data flow on both input and output ports.
• Provides programmable almost-empty and almost-full flags with selectable asynchronous or synchronous timing modes.
• Enables zero-latency retransmit functionality for rereading data starting from the first physical location of the FIFO.
• Offers dual operating modes: standard mode requiring explicit read requests and first-word fall-through mode for immediate data availability.

FIFOs Memory Applications

• Buffering large amounts of data in telecommunications systems
• Video processing applications requiring high-speed data buffering
• Network equipment needing bus size mismatch resolution
• Data communications interfaces

FIFOs Memory Procurement Notes

Verify the specific ordering suffix matches the required package type and temperature range. Confirm that the revision level aligns with your design specifications. Ensure compatibility with existing system voltage levels and clock domains before finalizing procurement decisions.

FIFOs Memory Selection Notes

Select this component when deep memory depth and high-speed operation are critical requirements. Consider the SN74V293 variant specifically for applications demanding 65536 x 18 bit capacity. Evaluate the need for independent read and write clocks and flexible bus width configurations during the selection process.

FIFOs Memory Part Context

This part belongs to the SN74V2xx series of high-performance external FIFO memories designed by Texas Instruments. These devices utilize advanced submicron CMOS technology to deliver high-speed performance suitable for demanding digital signal processing and communication applications.

FIFOs Memory Replacement Considerations

SN74V263, SN74V273, and SN74V283 are functionally similar FIFOs within the same family but offer different memory depths. Verify that the alternative part number meets the specific storage capacity requirements of the application.

FIFOs Memory FAQ

How does the First-Word Fall-Through (FWFT) mode differ from standard mode?

In FWFT mode, the first word written to an empty FIFO appears on the outputs after three RCLK transitions without requiring REN assertion. In standard mode, every word, including the first, requires a valid read request via REN and RCLK.

What is the function of the Retransmit (RT) pin?

Asserting the RT pin low during a rising RCLK edge initializes the read pointer to the first location of the memory array, allowing previously read data to be accessed again without disturbing the write pointer.

Can the input and output bus widths be configured independently?

Yes, the input width (IW) and output width (OW) pins allow for independent configuration of the write port and read port bus widths, supporting combinations such as 18-bit input to 9-bit output.